Shih Po-Hsun, Wu Sheng Yun
Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan.
Nanomaterials (Basel). 2017 Jul 21;7(7):188. doi: 10.3390/nano7070188.
Plenty of studies have been performed to probe the diverse properties of ZnO nanowires, but only a few have focused on the physical properties of a single nanowire since analyzing the growth mechanism along a single nanowire is difficult. In this study, a single ZnO nanowire was synthesized using a Ti-assisted chemical vapor deposition (CVD) method to avoid the appearance of catalytic contamination. Two-dimensional energy dispersive spectroscopy (EDS) mapping with a diffusion model was used to obtain the diffusion length and the activation energy ratio. The ratio value is close to 0.3, revealing that the growth of ZnO nanowires was attributed to the short-circuit diffusion.
已经进行了大量研究来探究氧化锌纳米线的各种特性，但由于分析沿单根纳米线的生长机制很困难，只有少数研究关注单根纳米线的物理特性。在本研究中，采用钛辅助化学气相沉积（CVD）方法合成了单根氧化锌纳米线，以避免催化污染的出现。使用具有扩散模型的二维能量色散光谱（EDS）映射来获得扩散长度和活化能比。该比值接近0.3，表明氧化锌纳米线的生长归因于短路扩散。
