Shih Po-Hsun, Li Tai-Yue, Yeh Yu-Chen, Wu Sheng Yun
Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan.
Nanomaterials (Basel). 2017 Oct 28;7(11):353. doi: 10.3390/nano7110353.
The impact of mixed defects on ZnO phononic and photonic properties at the nanoscale is only now being investigated. Here we report an effective strategy to study the distribution of defects along the growth direction of a single ZnO nanowire (NW), performed qualitatively as well as quantitatively using energy dispersive spectroscopy (EDS), confocal Raman-, and photoluminescence (PL)-mapping technique. A non-concomitant near-infrared (NIR) emission of 1.53 ± 0.01 eV was observed near the bottom region of 2.05 ± 0.05 μm along a single ZnO NW and could be successfully explained by the radiative recombination of shallowly trapped electrons V_O^(**) with deeply trapped holes at V_Zn^''. A linear chain model modified from a phonon confinement model was used to describe the growth of short-range correlations between the mean distance of defects and its evolution with spatial position along the axial growth direction by fitting the E2H mode. Our results are expected to provide new insights into improving the study of the photonic and photonic properties of a single nanowire.
混合缺陷对纳米尺度下ZnO声子和光子特性的影响目前才刚刚开始研究。在此，我们报告一种研究单个ZnO纳米线（NW）生长方向上缺陷分布的有效策略，该策略使用能量色散光谱（EDS）、共焦拉曼光谱和光致发光（PL）映射技术进行定性和定量分析。沿着单个ZnO纳米线在2.05±0.05μm的底部区域附近观察到1.53±0.01eV的非伴随近红外（NIR）发射，这可以通过浅俘获电子V_O^(**)与V_Zn^''处深俘获空穴的辐射复合成功解释。通过拟合E2H模式，使用从声子限制模型修改而来的线性链模型来描述缺陷平均距离与其沿轴向生长方向空间位置演变之间的短程相关性增长。我们的结果有望为改进单个纳米线的光子和光子特性研究提供新的见解。
