Department of Electrical Engineering, ∥California Nano-Systems Institute, University of California Los Angeles , Los Angeles, California 90095, United States.
School of Engineering, §School of Physics and Astronomy, Cardiff University , Cardiff CF24 3AA, United Kingdom.
Nano Lett. 2017 Sep 13;17(9):5244-5250. doi: 10.1021/acs.nanolett.7b01360. Epub 2017 Aug 2.
Semiconductor nanowire lasers are considered promising ultracompact and energy-efficient light sources in the field of nanophotonics. Although the integration of nanowire lasers onto silicon photonic platforms is an innovative path toward chip-scale optical communications and photonic integrated circuits, operating nanowire lasers at telecom-wavelengths remains challenging. Here, we report on InGaAs nanowire array lasers on a silicon-on-insulator platform operating up to 1440 nm at room temperature. Bottom-up photonic crystal nanobeam cavities are formed by growing nanowires as ordered arrays using selective-area epitaxy, and single-mode lasing by optical pumping is demonstrated. We also show that arrays of nanobeam lasers with individually tunable wavelengths can be integrated on a single chip by the simple adjustment of the lithographically defined growth pattern. These results exemplify a practical approach toward nanowire lasers for silicon photonics.
半导体纳米线激光器被认为是纳米光子学领域中极具前途的超紧凑、高能效光源。尽管将纳米线激光器集成到硅光子学平台上是实现芯片级光通信和光子集成电路的创新途径，但在电信波长下运行纳米线激光器仍然具有挑战性。在这里，我们报告了在绝缘体上硅平台上的 InGaAs 纳米线阵列激光器，其在室温下可工作至 1440nm。通过使用选择性外延生长将纳米线作为有序阵列来形成自下而上的光子晶体纳米梁腔，并通过光泵浦实现了单模激光。我们还表明，通过简单地调整光刻定义的生长图案，可以在单个芯片上集成具有可单独调谐波长的纳米梁激光器阵列。这些结果为硅光子学中的纳米线激光器提供了一种实用方法。
