State Key Lab of Crystal Materials, Shandong University , Jinan 250100, Shandong, P. R. China.
ACS Appl Mater Interfaces. 2017 Aug 16;9(32):26631-26636. doi: 10.1021/acsami.7b07277. Epub 2017 Aug 3.
As the most-studied III-nitride, theoretical researches have predicted the presence of gallium nitride (GaN) nanosheets (NSs). Herein, a facile synthesis approach is reported to prepare GaN NSs using graphene oxide (GO) as sacrificial template. As a new anode material of Li-ion battery (LIBs), GaN NSs anodes deliver the reversible discharge capacity above 600 mA h g at 1.0 A g after 1000 cycles, and excellent rate performance at current rates from 0.1 to 10 A g. These results not only extend the family of 2D materials but also facilitate their use in energy storage and other applications.
作为研究最多的 III 族氮化物，理论研究预测了氮化镓（GaN）纳米片（NSs）的存在。在此，报道了一种使用氧化石墨烯（GO）作为牺牲模板制备 GaN NSs 的简便合成方法。作为锂离子电池（LIBs）的新型阳极材料，GaN NSs 阳极在 1000 次循环后在 1.0 A g 的电流密度下可提供超过 600 mA h g 的可逆放电容量，并且在 0.1 至 10 A g 的电流密度下具有出色的倍率性能。这些结果不仅扩展了二维材料家族，而且促进了它们在储能和其他应用中的使用。
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