Liu Xingpeng, Peng Bin, Zhang Wanli, Zhu Jun, Liu Xingzhao, Wei Meng
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
Materials (Basel). 2017 Jan 16;10(1):69. doi: 10.3390/ma10010069.
In order to develop a film electrode for the surface acoustic wave (SAW) devices working in high temperature, harsh environments, novel AlN/Pt/ZnO multilayers were prepared using pulsed laser deposition (PLD) systems on langasite (LGS) substrates. The AlN film was used as a protective layer and the ZnO buffer layer was introduced to improve the crystal quality of Pt films. The results show that the resistances of Pt and AlN/Pt film electrodes violently increase above 600 °C and 800 °C, respectively, while the resistances of AlN/Pt/ZnO electrodes have more stable electrical resistance from room temperature to 1000 °C. The AlN/Pt/ZnO electrode, where the ZnO film was deposited at 600 °C, has the best temperature stability and can steadily work for 4 h at 1000 °C. The mechanism underlying the stable resistance of the AlN/Pt/ZnO electrode at a high temperature was investigated by analyzing the microstructure of the prepared samples. The proposed AlN/Pt/ZnO film electrode has great potential for applications in high temperature SAW sensors.
为了开发一种用于在高温、恶劣环境下工作的表面声波(SAW)器件的薄膜电极,采用脉冲激光沉积(PLD)系统在硅酸镧镓(LGS)衬底上制备了新型AlN/Pt/ZnO多层膜。AlN薄膜用作保护层,引入ZnO缓冲层以提高Pt薄膜的晶体质量。结果表明,Pt和AlN/Pt薄膜电极的电阻分别在600℃和800℃以上急剧增加,而AlN/Pt/ZnO电极从室温到1000℃具有更稳定的电阻。在600℃沉积ZnO薄膜的AlN/Pt/ZnO电极具有最佳的温度稳定性,在1000℃下能稳定工作4小时。通过分析制备样品的微观结构,研究了AlN/Pt/ZnO电极在高温下电阻稳定的机理。所提出的AlN/Pt/ZnO薄膜电极在高温SAW传感器中具有很大的应用潜力。