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具有高开关比的HfZrO薄膜的增强单极电阻开关特性

Enhanced Unipolar Resistive Switching Characteristics of HfZrO Thin Films with High ON/OFF Ratio.

作者信息

Wu Zhipeng, Zhu Jun

机构信息

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, China.

出版信息

Materials (Basel). 2017 Mar 22;10(3):322. doi: 10.3390/ma10030322.

DOI:10.3390/ma10030322
PMID:28772685
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5503322/
Abstract

A metal-insulator-metal structure resistive switching device based on HZO₂ (HZO) thin film deposited by pulse laser deposition (PLD) has been investigated for resistive random access memory (RRAM) applications. The devices demonstrated bistable and reproducible unipolar resistive switching (RS) behaviors with an extremely high OFF/ON ratio over 5400. The retention property had no degradation at 6 × 10⁴ s. The current-voltage characteristics of the HZO samples showed a Schottky emission conduction in the high voltage region (V < V < V), while at the low voltage region (V < V), the ohmic contact and space charge limited conduction (SCLC) are suggested to be responsible for the low and high resistance states, respectively. Combined with the conductance mechanism, the RS behaviors are attributed to joule heating and redox reactions in the HZO thin film induced by the external electron injection.

摘要

基于脉冲激光沉积（PLD）法制备的HZO₂（HZO）薄膜的金属-绝缘体-金属结构电阻开关器件已被用于电阻式随机存取存储器（RRAM）应用的研究。这些器件表现出双稳态且可重复的单极电阻开关（RS）行为，具有超过5400的极高开/关比。在6×10⁴ s时保持特性没有退化。HZO样品的电流-电压特性在高电压区域（V < V < V）显示出肖特基发射传导，而在低电压区域（V < V），欧姆接触和空间电荷限制传导（SCLC）分别被认为是低电阻态和高电阻态的原因。结合电导机制，RS行为归因于外部电子注入引起的HZO薄膜中的焦耳热和氧化还原反应。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1299/5503322/5e91d6e2a5e9/materials-10-00322-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1299/5503322/86982ead2ad5/materials-10-00322-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1299/5503322/0ebb9ec94bef/materials-10-00322-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1299/5503322/685fa703ce3f/materials-10-00322-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1299/5503322/18fe8baceda9/materials-10-00322-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1299/5503322/5e91d6e2a5e9/materials-10-00322-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1299/5503322/86982ead2ad5/materials-10-00322-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1299/5503322/0ebb9ec94bef/materials-10-00322-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1299/5503322/685fa703ce3f/materials-10-00322-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1299/5503322/18fe8baceda9/materials-10-00322-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1299/5503322/5e91d6e2a5e9/materials-10-00322-g005.jpg

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本文引用的文献

1
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges.基于氧化还原的电阻式开关存储器——纳米离子机制、前景与挑战
Adv Mater. 2009 Jul 13;21(25-26):2632-2663. doi: 10.1002/adma.200900375.
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Ferroelectricity in Simple Binary ZrO2 and HfO2.简单二元 ZrO2 和 HfO2 中的铁电性。
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Nanoionics-based resistive switching memories.基于纳米离子学的电阻式开关存储器。
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