通过具有嵌入式铝层的Al/SrZrTiO/Al/SrZrTiO/ITO改善电阻式开关存储单元性能

Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO/Al/SrZrTiO/ITO with Embedded Al Layer.

作者信息

Lee Ke-Jing, Lin Wei-Shao, Wang Li-Wen, Lin Hsin-Ni, Wang Yeong-Her

机构信息

Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan.

Program on Semiconductor Process Technology, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng-Kung University, Tainan 701, Taiwan.

出版信息

Nanomaterials (Basel). 2022 Dec 10;12(24):4412. doi: 10.3390/nano12244412.

DOI:10.3390/nano12244412

PMID:36558265

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9782405/

Abstract

The SrZrTiO (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedded Al in SZT thin film demonstrated outstanding device parameter improvements, such as a resistance ratio higher than 10, lower operation voltage (V = -0.8 V and V = 2.05 V), uniform film, and device stability of more than 10 s. The physical properties of the SZT thin film and the embedded-Al SZT thin-film RRAM devices were probed.

摘要

本文介绍了通过溶胶-凝胶工艺制备的用于电阻式随机存取存储器（RRAM）绝缘体的SrZrTiO（SZT）薄膜。在SZT薄膜中嵌入Al以增强开关特性。与纯SZT薄膜RRAM相比，在SZT薄膜中嵌入Al的RRAM在器件参数方面有显著改善，例如电阻比高于10、操作电压更低（V = -0.8 V和V = 2.05 V）、薄膜均匀以及器件稳定性超过10 s。对SZT薄膜和嵌入Al的SZT薄膜RRAM器件的物理性质进行了探究。