6H-SiC(0001)上硅掺杂超晶格结构的光电特性

Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001).

作者信息

Li Lianbi, Zang Yuan, Hu Jichao, Lin Shenghuang, Chen Zhiming

机构信息

School of Science, Xi'an Polytechnic University, Xi'an 710048, China.

Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China.

出版信息

Materials (Basel). 2017 May 25;10(6):583. doi: 10.3390/ma10060583.

DOI:10.3390/ma10060583

PMID:28772944

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5552176/

Abstract

The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 <21-1> at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm², the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm². Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

摘要

利用Silvaco-TCAD软件模拟了6H-SiC上p/n-Si掺杂超晶格结构（DSL）的能带结构和可见光光电特性。然后，通过化学气相沉积法在6H-SiC(0001) Si面上成功制备了具有40 nm-p-Si/50 nm-n-Si多层结构的Si-DSL结构。p/n-Si DSL的TEM表征证实了Si薄膜的择优取向外延生长以及在p-Si/n-Si界面处具有伯格斯矢量为1/3 <21-1>的失配位错。该器件具有明显的整流行为，开启电压约为1.2 V。在0.6 W/cm²的可见光照射下，该器件表现出显著的光电响应，光电流密度为2.1 mA/cm²。首次实现了Si-DSL/6H-SiC异质结构的可见光工作。