Liu Fang-Cheng, Li Jyun-Yong, Chen Tai-Hong, Chang Chun-How, Lee Ching-Ting, Hsiao Wei-Hua, Liu Day-Shan
Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 63201, Taiwan.
Additive Manufacturing and Laser Application, Industrial Technology Research Institute, Tainan 73445, Taiwan.
Materials (Basel). 2017 Jul 14;10(7):797. doi: 10.3390/ma10070797.
Ag-ZnO co-sputtered films at various atomic ratios of Ag (Ag/(Ag + Zn) at.%) were prepared by a radio frequency magnetron cosputtering system, using the co-sputtered targets of Ag and ZnO. The activation of the Ag acceptors (Ag) and the formation of the Ag aggregations (Ag⁰) in the ZnO matrix were investigated from XRD, Raman scattering, and XPS measurements. The Ag-ZnO co-sputtered film behaving like a -type conduction was achievable after annealing at 350 °C under air ambient for 1 h.
采用射频磁控共溅射系统,使用银(Ag)和氧化锌(ZnO)的共溅射靶材,制备了具有不同银原子比(Ag/(Ag + Zn)原子百分比)的Ag-ZnO共溅射薄膜。通过X射线衍射(XRD)、拉曼散射和X射线光电子能谱(XPS)测量,研究了氧化锌基体中银受主(Ag)的激活以及银团聚体(Ag⁰)的形成。在350°C空气环境下退火1小时后,Ag-ZnO共溅射薄膜可实现p型导电行为。