Lai Chun-Hung, Chen Hung-Wei, Liu Chih-Yi
Department of Electronic Engineering, National United University, Miaoli 36063, Taiwan.
Department and Institute of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 80778, Taiwan.
Materials (Basel). 2016 Jul 8;9(7):551. doi: 10.3390/ma9070551.
This study investigated the conduction properties of sputtered ZrO₂ exhibiting reversible and stable resistance change. Similar current distributions in on/off conduction and set/reset switching were observed in top electrodes with a diameter of 150, 250, and 350 µm. The size independence of current magnitude implied the presence of an uneven filamentary path over the electrode area. Increased current compliance was imposed on the turn-on process, and the observed increase in on-state current and turn-off threshold was attributed to incremental filament diameter. Variations in current conduction and resistance switching were analyzed by monitoring sweeping bias limits in both positive and negative polarities. These experimental observations were interpreted based on the aspect ratio of channels comprising conductive and oxidized filament portions, thereby elucidating the characteristics of filamentary resistive switching.
