Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi-do 446-712, Korea.
Nat Mater. 2011 Jul 10;10(8):625-30. doi: 10.1038/nmat3070.
Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaO(x)-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 10(12). Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.
多年来，许多试图替代硅基闪存的候选材料都因为各种原因而失败。基于氧化物的阻变存储器和相关的忆阻器已经成功地超过了许多器件要求的规格。然而，一种满足高密度、开关速度、耐久性、保持性以及最重要的功耗标准的材料或器件结构仍有待公布。在这项工作中，我们展示了一种基于 TaO(x) 的不对称无源开关器件，我们能够对其进行电阻开关定位，并满足所有上述要求。具体来说，开关电流的降低极大地降低了功耗，并且导致超过 10(12)次的极端循环耐久性。再加上 10 ns 的开关时间，这使得它有可能应用于工作内存空间。此外，通过组合两个具有内在肖特基势垒的器件，我们可以消除在高密度交叉阵列中解决杂散漏电通路问题时对离散晶体管或二极管的需求。
