Wouters Dirk J, Menzel Stephan, Rupp Jonathan A J, Hennen Tyler, Waser Rainer
Institut für Werkstoffe der Elektrotechnik II (IWE II) RWTH Aachen, Sommerfeldstraße 24, 52072 Aachen, Germany.
Faraday Discuss. 2019 Feb 18;213(0):183-196. doi: 10.1039/c8fd00116b.
The I-V switching curves of bipolar switching non-volatile ReRAM devices show peculiar characteristics, such as an abrupt ON switching and the existence of a universal switching voltage. This switching behavior has been explained by the presence of a filamentary process, in which the width of a conductive filament changes during switching resulting in different resistance states. Vice versa, similar (ON) switching behavior, e.g. that of volatile switching Cr-doped V2O3 devices, has been interpreted as an indication of the presence of similar filamentary switching. In this paper, we want to review the correlation between filamentary (width) switching and the (SET) I-V characteristics by discussing the existing models. For the Cr-doped V2O3 devices, on the other hand, it is argued that a different, constant filament width switching mode may be present.
双极开关非易失性阻变随机存取存储器（ReRAM）器件的电流-电压（I-V）切换曲线呈现出独特的特性，例如突然的导通切换以及存在通用的切换电压。这种切换行为已通过丝状过程的存在得到解释，在丝状过程中，导电丝的宽度在切换期间发生变化，从而导致不同的电阻状态。反之，类似的（导通）切换行为，例如掺杂铬的氧化钒（Cr-doped V2O3）易失性开关器件的切换行为，已被解释为存在类似丝状切换的迹象。在本文中，我们希望通过讨论现有模型来回顾丝状（宽度）切换与（设置）I-V特性之间的相关性。另一方面，对于掺杂铬的氧化钒器件，有人认为可能存在不同的、恒定丝状宽度的切换模式。
