铜铬源漏电极后处理对非晶铟镓锌氧化物薄膜晶体管的影响。

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.

作者信息

Hu Shiben, Fang Zhiqiang, Ning Honglong, Tao Ruiqiang, Liu Xianzhe, Zeng Yong, Yao Rihui, Huang Fuxiang, Li Zhengcao, Xu Miao, Wang Lei, Lan Linfeng, Peng Junbiao

机构信息

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Department of Materials Science and Engineering School, South China University of Technology, Guangzhou 510640, China.

School of Materials Science and Engineering, Chongqing University of Technology, Chongqing 400054, China.

出版信息

Materials (Basel). 2016 Jul 27;9(8):623. doi: 10.3390/ma9080623.

DOI:10.3390/ma9080623

PMID:28773743

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5509041/

Abstract

We report a high-performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. The TFT shows a high mobility of 39.4 cm 2 ·V - 1 ·s - 1 a turn-on voltage of -0.8 V and a low subthreshold swing of 0.47 V/decade. Cu diffusion is suppressed because pre-annealing can protect a-IGZO from damage during the electrode sputtering and reduce the copper diffusion paths by making film denser. Due to the interaction of Cr with a-IGZO, the carrier concentration of a-IGZO, which is responsible for high mobility, rises.

摘要

我们报道了一种具有新型铜铬（Cu-Cr）合金源极/漏极电极的高性能非晶铟镓锌氧化物（a-IGZO）薄膜晶体管（TFT）。该TFT表现出39.4 cm²·V⁻¹·s⁻¹的高迁移率、-0.8 V的开启电压以及0.47 V/十倍频程的低亚阈值摆幅。预退火可以保护a-IGZO在电极溅射过程中不受损伤，并通过使薄膜更致密来减少铜扩散路径，从而抑制了铜扩散。由于Cr与a-IGZO的相互作用，负责高迁移率的a-IGZO的载流子浓度升高。