Liu Wei-Sheng, Hsu Chih-Hao, Jiang Yu, Lai Yi-Chun, Kuo Hsing-Chun
Department of Electrical Engineering, Yuan Ze University, Chung-Li 320, Taiwan.
Department of Nursing, Division of Basic Medical Sciences, Chang Gung University of Science and Technology, Chiayi 613, Taiwan.
Membranes (Basel). 2021 Dec 30;12(1):49. doi: 10.3390/membranes12010049.
In this study, high-performance indium-gallium-zinc oxide thin-film transistors (IGZO TFTs) with a dual-gate (DG) structure were manufactured using plasma treatment and rapid thermal annealing (RTA). Atomic force microscopy measurements showed that the surface roughness decreased upon increasing the O ratio from 16% to 33% in the argon-oxygen plasma treatment mixture. Hall measurement results showed that both the thin-film resistivity and carrier Hall mobility of the Ar-O plasma-treated IGZO thin films increased with the reduction of the carrier concentration caused by the decrease in the oxygen vacancy density; this was also verified using X-ray photoelectron spectroscopy measurements. IGZO thin films treated with Ar-O plasma were used as channel layers for fabricating DG TFT devices. These DG IGZO TFT devices were subjected to RTA at 100 °C-300 °C for improving the device characteristics; the field-effect mobility, subthreshold swing, and I/I current ratio of the 33% O plasma-treated DG TFT devices improved to 58.8 cm/V·s, 0.12 V/decade, and 5.46 × 10, respectively. Long-term device stability reliability tests of the DG IGZO TFTs revealed that the threshold voltage was highly stable.
在本研究中，采用等离子体处理和快速热退火（RTA）制备了具有双栅（DG）结构的高性能铟镓锌氧化物薄膜晶体管（IGZO TFT）。原子力显微镜测量结果表明，在氩氧等离子体处理混合物中，随着氧比从16%增加到33%，表面粗糙度降低。霍尔测量结果表明，Ar-O等离子体处理的IGZO薄膜的薄膜电阻率和载流子霍尔迁移率均随着氧空位密度降低导致的载流子浓度降低而增加；这也通过X射线光电子能谱测量得到了验证。用Ar-O等离子体处理的IGZO薄膜用作制造DG TFT器件的沟道层。这些DG IGZO TFT器件在100℃至300℃下进行RTA以改善器件特性；33% O等离子体处理的DG TFT器件的场效应迁移率、亚阈值摆幅和I/I电流比分别提高到58.8 cm²/V·s、0.12 V/十倍频程和5.46×10⁷。DG IGZO TFT的长期器件稳定性可靠性测试表明，阈值电压非常稳定。
