Ning Honglong, Chen Jianqiu, Fang Zhiqiang, Tao Ruiqiang, Cai Wei, Yao Rihui, Hu Shiben, Zhu Zhennan, Zhou Yicong, Yang Caigui, Peng Junbiao
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Materials (Basel). 2017 Jan 10;10(1):51. doi: 10.3390/ma10010051.
Printing technologies for thin-film transistors (TFTs) have recently attracted much interest owing to their eco-friendliness, direct patterning, low cost, and roll-to-roll manufacturing processes. Lower production costs could result if electrodes fabricated by vacuum processes could be replaced by inkjet printing. However, poor interfacial contacts and/or serious diffusion between the active layer and the silver electrodes are still problematic for achieving amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs with good electrical performance. In this paper, silver (Ag) source/drain electrodes were directly inkjet-printed on an amorphous a-IGZO layer to fabricate TFTs that exhibited a mobility of 0.29 cm²·V·s and an on/off current ratio of over 10⁵. To the best of our knowledge, this is a major improvement for bottom-gate top-contact a-IGZO TFTs with directly printed silver electrodes on a substrate with no pretreatment. This study presents a promising alternative method of fabricating electrodes of a-IGZO TFTs with desirable device performance.
近年来，薄膜晶体管（TFT）的印刷技术因其环保、直接图案化、低成本和卷对卷制造工艺而备受关注。如果能用喷墨印刷取代通过真空工艺制造的电极，生产成本可能会降低。然而，对于实现具有良好电性能的非晶铟镓锌氧化物（a-IGZO）TFT来说，有源层与银电极之间不良的界面接触和/或严重的扩散仍然是个问题。在本文中，银（Ag）源极/漏极电极被直接喷墨印刷在非晶a-IGZO层上，以制造出迁移率为0.29 cm²·V·s且开/关电流比超过10⁵的TFT。据我们所知，对于在未经预处理的基板上直接印刷银电极的底栅顶接触a-IGZO TFT而言，这是一个重大改进。本研究提出了一种制造具有理想器件性能的a-IGZO TFT电极的有前景的替代方法。
