Yang Shuang, Chen Fei, Shen Qiang, Lavernia Enrique J, Zhang Lianmeng
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.
Department of Chemical Engineering and Materials Science, University of California, Davis, CA 95616, USA.
Materials (Basel). 2016 Jul 29;9(8):638. doi: 10.3390/ma9080638.
In this study we report on the sintering behavior, microstructure and electrical properties of Al-doped ZnO ceramics containing 0-0.2 wt. % graphene sheets (AZO-GNSs) and processed using spark plasma sintering (SPS). Our results show that the addition of <0.25 wt. % GNSs enhances both the relative density and the electrical resistivity of AZO ceramics. In terms of the microstructure, the GNSs are distributed at grain boundaries. In addition, the GNSs are also present between ZnO and secondary phases (e.g., ZnAl₂O₄) and likely contribute to the measured enhancement of Hall mobility (up to 105.1 cm²·V·s) in these AZO ceramics. The minimum resistivity of the AZO-GNS composite ceramics is 3.1 × 10 Ω·cm which compares favorably to the value of AZO ceramics which typically have a resistivity of 1.7 × 10 Ω·cm.
在本研究中，我们报道了含0 - 0.2 wt.%石墨烯片（AZO - GNSs）并采用放电等离子烧结（SPS）工艺制备的铝掺杂氧化锌陶瓷的烧结行为、微观结构和电学性能。我们的结果表明，添加<0.25 wt.%的GNSs可提高AZO陶瓷的相对密度和电阻率。在微观结构方面，GNSs分布在晶界处。此外，GNSs也存在于ZnO和第二相（如ZnAl₂O₄）之间，并且可能是这些AZO陶瓷中霍尔迁移率（高达105.1 cm²·V·s）提高的原因。AZO - GNS复合陶瓷的最小电阻率为3.1×10⁻⁴Ω·cm，与通常电阻率为1.7×10⁻³Ω·cm的AZO陶瓷相比具有优势。
