Koh Haeng-Deog, Kim Mi-Jeong
Inorganic Materials Laboratory, Samsung Advanced Institute of Technology (SAIT), Samsung Material Research Complex, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803, Korea.
Materials (Basel). 2016 Aug 1;9(8):648. doi: 10.3390/ma9080648.
A photo-crosslinked polystyrene (PS) thin film is investigated as a potential guiding sub-layer for polystyrene-block-poly (methyl methacrylate) block copolymer (BCP) cylindrical nanopattern formation via topographic directed self-assembly (DSA). When compared to a non-crosslinked PS brush sub-layer, the photo-crosslinked PS sub-layer provided longer correlation lengths of the BCP nanostructure, resulting in a highly uniform DSA nanopattern with a low number of BCP dislocation defects. Depending on the thickness of the sub-layer used, parallel or orthogonal orientations of DSA nanopattern arrays were obtained that covered the entire surface of patterned Si substrates, including both trench and mesa regions. The design of DSA sub-layers and guide patterns, such as hardening the sub-layer by photo-crosslinking, nano-structuring on mesas, the relation between trench/mesa width, and BCP equilibrium period, were explored with a view to developing defect-reduced DSA lithography technology.
研究了一种光交联聚苯乙烯（PS）薄膜，作为通过形貌定向自组装（DSA）形成聚苯乙烯-嵌段-聚（甲基丙烯酸甲酯）嵌段共聚物（BCP）圆柱形纳米图案的潜在导向子层。与未交联的PS刷状子层相比，光交联的PS子层提供了更长的BCP纳米结构相关长度，从而形成了具有少量BCP位错缺陷的高度均匀的DSA纳米图案。根据所使用子层的厚度，获得了覆盖图案化硅衬底整个表面（包括沟槽和台面区域）的DSA纳米图案阵列的平行或正交取向。为了开发减少缺陷的DSA光刻技术，探索了DSA子层和导向图案的设计，如通过光交联硬化子层、在台面上进行纳米结构化、沟槽/台面宽度与BCP平衡周期之间的关系。
