快速热退火对通过原子层沉积法生长的Zr掺杂ZnO薄膜的结构、电学和光学性质的影响。

Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition.

作者信息

Wu Jingjin, Zhao Yinchao, Zhao Ce Zhou, Yang Li, Lu Qifeng, Zhang Qian, Smith Jeremy, Zhao Yongming

机构信息

Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK.

Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China.

出版信息

Materials (Basel). 2016 Aug 13;9(8):695. doi: 10.3390/ma9080695.

DOI:10.3390/ma9080695

PMID:28773816

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5512517/

Abstract

The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV-vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350-550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

摘要

通过原子层沉积（ALD）生长的4原子百分比锆掺杂氧化锌（ZnO:Zr）薄膜在350至950°C的不同温度下进行退火。对快速热退火（RTA）处理的ZnO:Zr薄膜的结构、电学和光学性能进行了评估，以找出稳定性极限。研究发现，晶粒尺寸在350°C时增大，在350至850°C之间减小，而在850°C时又再次增大。紫外-可见光谱表征表明，光学带隙向更长波长移动。霍尔测量表明，在低退火温度下电阻率几乎保持恒定，而在750°C处理后由于载流子浓度和霍尔迁移率的影响而迅速增加。最佳退火温度在350-550°C范围内。在超strate薄膜太阳能电池沉积过程中，ZnO:Zr薄膜涂覆的玻璃基板在高达550°C的温度下表现出良好的光学和电学性能。