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从生长面到器件界面:在单层六方氮化硼下保留金属铁。

From Growth Surface to Device Interface: Preserving Metallic Fe under Monolayer Hexagonal Boron Nitride.

机构信息

Department of Engineering, University of Cambridge , JJ Thomson Avenue, CB3 0FA Cambridge, U.K.

Surface Engineering and Nanotechnology Institute, Cranfield University , College Road, MK43 0AL Cranfield, U.K.

出版信息

ACS Appl Mater Interfaces. 2017 Sep 6;9(35):29973-29981. doi: 10.1021/acsami.7b08717. Epub 2017 Aug 22.

Abstract

We investigate the interfacial chemistry between Fe catalyst foils and monolayer hexagonal boron nitride (h-BN) following chemical vapor deposition and during subsequent atmospheric exposure, using scanning electron microscopy, X-ray photoemission spectroscopy, and scanning photoelectron microscopy. We show that regions of the Fe surface covered by h-BN remain in a metallic state during exposure to moist air for ∼40 h at room temperature. This protection is attributed to the strong interfacial interaction between h-BN and Fe, which prevents the rapid intercalation of oxidizing species. Local Fe oxidation is observed on bare Fe regions and close to defects in the h-BN film (e.g., domain boundaries, wrinkles, and edges), which over the longer-term provide pathways for slow bulk oxidation of Fe. We further confirm that the interface between h-BN and metallic Fe can be recovered by vacuum annealing at ∼600 °C, although this is accompanied by the creation of defects within the h-BN film. We discuss the importance of these findings in the context of integrated manufacturing and transfer-free device integration of h-BN, particularly for technologically important applications where h-BN has potential as a tunnel barrier such as magnetic tunnel junctions.

摘要

我们通过扫描电子显微镜、X 射线光电子能谱和扫描光电显微镜研究了铁催化剂箔与单层六方氮化硼(h-BN)之间的界面化学,研究内容涉及化学气相沉积后以及随后在大气环境中的暴露过程。结果表明,在室温下,暴露在潮湿空气中约 40 小时后,被 h-BN 覆盖的铁表面区域仍保持金属状态。这种保护归因于 h-BN 和 Fe 之间的强界面相互作用,该相互作用阻止了氧化物种的快速插入。在裸露的 Fe 区域和 h-BN 薄膜的缺陷附近(例如畴界、褶皱和边缘)观察到局部 Fe 氧化,这在较长时间内为 Fe 的缓慢体相氧化提供了途径。我们进一步证实,通过在约 600°C 的真空中退火可以恢复 h-BN 和金属 Fe 之间的界面,尽管这伴随着 h-BN 薄膜内缺陷的产生。我们讨论了这些发现对于 h-BN 的集成制造和无转移器件集成的重要性,特别是对于 h-BN 作为隧道势垒具有潜在应用的技术重要应用,例如磁性隧道结。

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