School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.
Nanoscale. 2018 Aug 30;10(34):16243-16251. doi: 10.1039/c8nr03984d.
Hexagonal boron nitride (h-BN) is an ideal substrate for two-dimensional (2D) materials because of its unique electrically insulating nature, atomic smoothness and low density of dangling bonds. Although mechanical exfoliation from bulk crystals produces the most pristine flakes, scalable fabrication of devices is still dependent on other more direct synthetic routes. To date, the most utilized method to synthesize large-area h-BN films is by chemical vapor deposition (CVD) using catalytic metal substrates. However, a major drawback for such synthetic films is the manifestation of thermally-induced wrinkles, which severely disrupt the smoothness of the h-BN films. Here, we provide a detailed characterization study of the microstructure of h-BN wrinkles and demonstrate an effective post-synthesis smoothening route by thermal annealing in air. The smoothened h-BN film showed an improved surface smoothness by up to 66% and resulted in a much cleaner surface due to the elimination of polymer residues with no substantial oxidative damage to the film. The unwrinkling effect is attributed to the hydroxylation of the h-BN film as well as the substrate surface, resulting in a reduction in adhesion energy at the interface. Dehydroxylation occurs over time under ambient conditions at room temperature and the smoothened film can be restored back with the intrinsic properties of h-BN. This work provides an efficient route to achieve smoother h-BN films, which are beneficial for high-performance 2D heterostructure devices.
六方氮化硼(h-BN)因其独特的电绝缘性质、原子平整度和悬空键密度低,是二维(2D)材料的理想衬底。虽然从块状晶体机械剥离可以得到最原始的薄片,但器件的规模化制备仍然依赖于其他更直接的合成途径。迄今为止,合成大面积 h-BN 薄膜最常用的方法是使用催化金属衬底的化学气相沉积(CVD)。然而,对于这种合成薄膜来说,一个主要的缺点是热诱导褶皱的表现,这严重破坏了 h-BN 薄膜的平整度。在这里,我们对 h-BN 褶皱的微观结构进行了详细的特征研究,并通过在空气中进行热退火展示了一种有效的合成后平滑化途径。平滑化后的 h-BN 薄膜的表面平整度提高了 66%,由于消除了聚合物残留物,表面更加清洁,而对薄膜没有实质性的氧化损伤。无褶皱效果归因于 h-BN 薄膜以及衬底表面的羟基化,从而降低了界面处的粘附能。在室温下的环境条件下,随着时间的推移会发生脱羟反应,平滑化的薄膜可以通过 h-BN 的固有特性恢复其原始状态。这项工作提供了一种实现更平滑 h-BN 薄膜的有效途径,这对高性能 2D 异质结构器件非常有益。