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通过硅掺杂铁催化剂对单层六方氮化硼大单晶畴进行成核控制。

Nucleation control for large, single crystalline domains of monolayer hexagonal boron nitride via Si-doped Fe catalysts.

作者信息

Caneva Sabina, Weatherup Robert S, Bayer Bernhard C, Brennan Barry, Spencer Steve J, Mingard Ken, Cabrero-Vilatela Andrea, Baehtz Carsten, Pollard Andrew J, Hofmann Stephan

机构信息

Department of Engineering, University of Cambridge , JJ Thomson Avenue, CB3 0FA, Cambridge, United Kingdom.

出版信息

Nano Lett. 2015 Mar 11;15(3):1867-75. doi: 10.1021/nl5046632. Epub 2015 Feb 17.

Abstract

The scalable chemical vapor deposition of monolayer hexagonal boron nitride (h-BN) single crystals, with lateral dimensions of ∼0.3 mm, and of continuous h-BN monolayer films with large domain sizes (>25 μm) is demonstrated via an admixture of Si to Fe catalyst films. A simple thin-film Fe/SiO2/Si catalyst system is used to show that controlled Si diffusion into the Fe catalyst allows exclusive nucleation of monolayer h-BN with very low nucleation densities upon exposure to undiluted borazine. Our systematic in situ and ex situ characterization of this catalyst system establishes a basis for further rational catalyst design for compound 2D materials.

摘要

通过向铁催化剂薄膜中添加硅,实现了横向尺寸约为0.3毫米的单层六方氮化硼(h-BN)单晶以及具有大畴尺寸(>25微米)的连续h-BN单层薄膜的可扩展化学气相沉积。使用一种简单的薄膜铁/二氧化硅/硅催化剂体系表明,控制硅扩散到铁催化剂中,可使在暴露于未稀释的硼嗪时,单层h-BN以非常低的成核密度进行排他性成核。我们对该催化剂体系进行的系统原位和非原位表征为进一步合理设计用于二维化合物材料的催化剂奠定了基础。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bf28/4358078/947b746af894/nl-2014-046632_0002.jpg

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