• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

通过硅掺杂铁催化剂对单层六方氮化硼大单晶畴进行成核控制。

Nucleation control for large, single crystalline domains of monolayer hexagonal boron nitride via Si-doped Fe catalysts.

作者信息

Caneva Sabina, Weatherup Robert S, Bayer Bernhard C, Brennan Barry, Spencer Steve J, Mingard Ken, Cabrero-Vilatela Andrea, Baehtz Carsten, Pollard Andrew J, Hofmann Stephan

机构信息

Department of Engineering, University of Cambridge , JJ Thomson Avenue, CB3 0FA, Cambridge, United Kingdom.

出版信息

Nano Lett. 2015 Mar 11;15(3):1867-75. doi: 10.1021/nl5046632. Epub 2015 Feb 17.

DOI:10.1021/nl5046632
PMID:25664483
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4358078/
Abstract

The scalable chemical vapor deposition of monolayer hexagonal boron nitride (h-BN) single crystals, with lateral dimensions of ∼0.3 mm, and of continuous h-BN monolayer films with large domain sizes (>25 μm) is demonstrated via an admixture of Si to Fe catalyst films. A simple thin-film Fe/SiO2/Si catalyst system is used to show that controlled Si diffusion into the Fe catalyst allows exclusive nucleation of monolayer h-BN with very low nucleation densities upon exposure to undiluted borazine. Our systematic in situ and ex situ characterization of this catalyst system establishes a basis for further rational catalyst design for compound 2D materials.

摘要

通过向铁催化剂薄膜中添加硅,实现了横向尺寸约为0.3毫米的单层六方氮化硼(h-BN)单晶以及具有大畴尺寸(>25微米)的连续h-BN单层薄膜的可扩展化学气相沉积。使用一种简单的薄膜铁/二氧化硅/硅催化剂体系表明,控制硅扩散到铁催化剂中,可使在暴露于未稀释的硼嗪时,单层h-BN以非常低的成核密度进行排他性成核。我们对该催化剂体系进行的系统原位和非原位表征为进一步合理设计用于二维化合物材料的催化剂奠定了基础。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bf28/4358078/8e885a3ad088/nl-2014-046632_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bf28/4358078/947b746af894/nl-2014-046632_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bf28/4358078/315a44134954/nl-2014-046632_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bf28/4358078/221a2e81154f/nl-2014-046632_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bf28/4358078/81afdb476f77/nl-2014-046632_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bf28/4358078/8e885a3ad088/nl-2014-046632_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bf28/4358078/947b746af894/nl-2014-046632_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bf28/4358078/315a44134954/nl-2014-046632_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bf28/4358078/221a2e81154f/nl-2014-046632_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bf28/4358078/81afdb476f77/nl-2014-046632_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bf28/4358078/8e885a3ad088/nl-2014-046632_0006.jpg

相似文献

1
Nucleation control for large, single crystalline domains of monolayer hexagonal boron nitride via Si-doped Fe catalysts.通过硅掺杂铁催化剂对单层六方氮化硼大单晶畴进行成核控制。
Nano Lett. 2015 Mar 11;15(3):1867-75. doi: 10.1021/nl5046632. Epub 2015 Feb 17.
2
Controlling Catalyst Bulk Reservoir Effects for Monolayer Hexagonal Boron Nitride CVD.控制用于单层六方氮化硼化学气相沉积的催化剂体储效应。
Nano Lett. 2016 Feb 10;16(2):1250-61. doi: 10.1021/acs.nanolett.5b04586. Epub 2016 Jan 19.
3
Chemical vapor deposition and etching of high-quality monolayer hexagonal boron nitride films.高质量单层六方氮化硼薄膜的化学气相沉积和刻蚀。
ACS Nano. 2011 Sep 27;5(9):7303-9. doi: 10.1021/nn202141k. Epub 2011 Aug 1.
4
Chemical Vapor Deposition Growth of Large Single-Crystal Mono-, Bi-, Tri-Layer Hexagonal Boron Nitride and Their Interlayer Stacking.化学气相沉积生长的大单晶单层、双层和三层六方氮化硼及其层间堆叠。
ACS Nano. 2017 Dec 26;11(12):12057-12066. doi: 10.1021/acsnano.7b04841. Epub 2017 Nov 22.
5
Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains.通过控制成核种子和畴制备六方氮化硼原子单层单晶膜
Sci Rep. 2015 Nov 5;5:16159. doi: 10.1038/srep16159.
6
In Situ Observations during Chemical Vapor Deposition of Hexagonal Boron Nitride on Polycrystalline Copper.六方氮化硼在多晶铜上化学气相沉积过程中的原位观察
Chem Mater. 2014 Nov 25;26(22):6380-6392. doi: 10.1021/cm502603n. Epub 2014 Oct 20.
7
Controlled Growth of Large-Area Uniform Multilayer Hexagonal Boron Nitride as an Effective 2D Substrate.大面积均匀多层六方氮化硼作为有效二维衬底的可控生长
ACS Nano. 2018 Jun 26;12(6):6236-6244. doi: 10.1021/acsnano.8b03055. Epub 2018 Jun 12.
8
From Growth Surface to Device Interface: Preserving Metallic Fe under Monolayer Hexagonal Boron Nitride.从生长面到器件界面:在单层六方氮化硼下保留金属铁。
ACS Appl Mater Interfaces. 2017 Sep 6;9(35):29973-29981. doi: 10.1021/acsami.7b08717. Epub 2017 Aug 22.
9
Epitaxial growth of a single-domain hexagonal boron nitride monolayer.单晶六方氮化硼单层的外延生长。
ACS Nano. 2014 Dec 23;8(12):12063-70. doi: 10.1021/nn5058968. Epub 2014 Nov 18.
10
Synthesis of large-area multilayer hexagonal boron nitride for high material performance.用于实现高材料性能的大面积多层六方氮化硼的合成。
Nat Commun. 2015 Oct 28;6:8662. doi: 10.1038/ncomms9662.

引用本文的文献

1
Unravelling the Epitaxial Growth Mechanism of Hexagonal and Nanoporous Boron Nitride: A First-Principles Microkinetic Model.揭示六方氮化硼和纳米多孔氮化硼的外延生长机制:第一性原理微观动力学模型
Small. 2025 Mar;21(10):e2405404. doi: 10.1002/smll.202405404. Epub 2025 Jan 5.
2
Growth of Noncentrosymmetric Two-Dimensional Single Crystals.非中心对称二维单晶的生长
Precis Chem. 2024 Apr 5;2(7):330-354. doi: 10.1021/prechem.3c00122. eCollection 2024 Jul 22.
3
Metrology for 2D materials: a perspective review from the international roadmap for devices and systems.

本文引用的文献

1
In Situ Observations during Chemical Vapor Deposition of Hexagonal Boron Nitride on Polycrystalline Copper.六方氮化硼在多晶铜上化学气相沉积过程中的原位观察
Chem Mater. 2014 Nov 25;26(22):6380-6392. doi: 10.1021/cm502603n. Epub 2014 Oct 20.
2
Electronics based on two-dimensional materials.基于二维材料的电子器件。
Nat Nanotechnol. 2014 Oct;9(10):768-79. doi: 10.1038/nnano.2014.207.
3
Interdependency of subsurface carbon distribution and graphene-catalyst interaction.地下碳分布与石墨烯-催化剂相互作用的相互依赖性。
二维材料的计量学:来自器件与系统国际路线图的视角综述
Nanoscale Adv. 2024 Apr 8;6(9):2260-2269. doi: 10.1039/d3na01148h. eCollection 2024 Apr 30.
4
Label-Free Imaging of DNA Interactions with 2D Materials.DNA与二维材料相互作用的无标记成像
ACS Photonics. 2024 Jan 10;11(2):737-744. doi: 10.1021/acsphotonics.3c01604. eCollection 2024 Feb 21.
5
High magnetoresistance of a hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission.通过激发电子传输实现的基于六方氮化硼-石墨烯异质结构的磁性隧道结的高磁阻
Nanoscale Adv. 2021 Oct 21;4(1):117-124. doi: 10.1039/d1na00272d. eCollection 2021 Dec 21.
6
Two-dimensional materials prospects for non-volatile spintronic memories.二维材料在非易失性自旋电子存储器中的应用前景。
Nature. 2022 Jun;606(7915):663-673. doi: 10.1038/s41586-022-04768-0. Epub 2022 Jun 22.
7
Polymer composites based on hexagonal boron nitride and their application in thermally conductive composites.基于六方氮化硼的聚合物复合材料及其在导热复合材料中的应用。
RSC Adv. 2018 Jun 14;8(39):21948-21967. doi: 10.1039/c8ra02685h. eCollection 2018 Jun 13.
8
Controlled synthesis of uniform multilayer hexagonal boron nitride films on FeB alloy.在FeB合金上可控合成均匀的多层六方氮化硼薄膜。
RSC Adv. 2019 Apr 1;9(18):10155-10158. doi: 10.1039/c9ra00595a. eCollection 2019 Mar 28.
9
Engineering Optically Active Defects in Hexagonal Boron Nitride Using Focused Ion Beam and Water.利用聚焦离子束和水在六方氮化硼中制造光学活性缺陷
ACS Nano. 2022 Mar 22;16(3):3695-3703. doi: 10.1021/acsnano.1c07086. Epub 2022 Mar 7.
10
Precise Vapor-Phase Synthesis of Two-Dimensional Atomic Single Crystals.二维原子单晶的精确气相合成
iScience. 2019 Oct 25;20:527-545. doi: 10.1016/j.isci.2019.09.038. Epub 2019 Sep 28.
J Am Chem Soc. 2014 Oct 1;136(39):13698-708. doi: 10.1021/ja505454v. Epub 2014 Sep 19.
4
Large-area monolayer hexagonal boron nitride on Pt foil.大面积单层六方氮化硼在铂箔上。
ACS Nano. 2014 Aug 26;8(8):8520-8. doi: 10.1021/nn503140y. Epub 2014 Aug 8.
5
Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper.在电解抛光铜上生长大单晶二维氮化硼六边形。
Nano Lett. 2014 Feb 12;14(2):839-46. doi: 10.1021/nl404207f. Epub 2014 Jan 23.
6
The role of surface oxygen in the growth of large single-crystal graphene on copper.表面氧在铜上生长大单晶石墨烯中的作用。
Science. 2013 Nov 8;342(6159):720-3. doi: 10.1126/science.1243879. Epub 2013 Oct 24.
7
Ultrathin high-temperature oxidation-resistant coatings of hexagonal boron nitride.六方氮化硼的超薄高温抗氧化涂层。
Nat Commun. 2013;4:2541. doi: 10.1038/ncomms3541.
8
Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary.在蓝宝石上控制高质量单层 WS2 层的生长并对其晶界进行成像。
ACS Nano. 2013 Oct 22;7(10):8963-71. doi: 10.1021/nn403454e. Epub 2013 Sep 24.
9
Observing graphene grow: catalyst-graphene interactions during scalable graphene growth on polycrystalline copper.观察石墨烯的生长:多晶铜上可扩展石墨烯生长过程中催化剂-石墨烯的相互作用。
Nano Lett. 2013 Oct 9;13(10):4769-78. doi: 10.1021/nl4023572. Epub 2013 Sep 24.
10
In situ observations of the atomistic mechanisms of Ni catalyzed low temperature graphene growth.原位观察 Ni 催化低温石墨烯生长的原子机制。
ACS Nano. 2013 Sep 24;7(9):7901-12. doi: 10.1021/nn402927q. Epub 2013 Aug 15.