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自组装单分子层修饰的金电极上偏二氟乙烯与三氟乙烯共聚物薄膜的铁电开关特性

Ferroelectric Switching of Vinylidene and Trifluoroethylene Copolymer Thin Films on Au Electrodes Modified with Self-Assembled Monolayers.

作者信息

Tsutsumi Naoto, Kitano Tomotaka, Kinashi Kenji, Sakai Wataru

机构信息

Department of Macromolecular Science and Engineering, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan.

出版信息

Materials (Basel). 2014 Sep 8;7(9):6367-6376. doi: 10.3390/ma7096367.

Abstract

The ferroelectric switching characteristics of a vinylidene fluoride and trifluoroethylene copolymer were significantly changed via the chemical modification of a gold electrode with an alkanethiol self-assembled monolayer (SAM). The alkanethiol SAM-Au electrode successfully suppressed the leakage current (dark current) from the electrode to the bulk ferroelectric. Smaller leakage currents led to the formation of an effective electric field in the bulk ferroelectric. At switching cycles ranging from 10 to 100 kHz, significant changes in the ferroelectric properties were observed. At 100 kHz, a remanent polarization (Pr) of 68 mC·m² was measured, whereas a very small Pr value of 2.4 mC·m² was measured for the sample without a SAM. The switching speed of the SAM-Au electrode is as twice as fast as that of the unmodified electrode. A large potential barrier was formed via the insertion of a SAM between the Au electrode and the ferroelectric, effectively changing the ferroelectric switching characteristics.

摘要

通过用烷硫醇自组装单分子层(SAM)对金电极进行化学修饰,显著改变了偏二氟乙烯与三氟乙烯共聚物的铁电开关特性。烷硫醇SAM修饰的金电极成功抑制了从电极到块状铁电体的漏电流(暗电流)。较小的漏电流导致在块状铁电体中形成有效电场。在10至100kHz的开关频率范围内,观察到铁电性能的显著变化。在100kHz时,测得剩余极化强度(Pr)为68mC·m²,而对于没有SAM的样品,测得的Pr值非常小,为2.4mC·m²。SAM修饰的金电极的开关速度是未修饰电极的两倍。通过在金电极和铁电体之间插入SAM形成了一个大的势垒,有效地改变了铁电开关特性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/30a9/5456128/30385162386c/materials-07-06367-g001.jpg

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