Center for Energy Studies, Indian Institute of Technology Delhi, New Delhi, 110016, India; Department of Physics, University of the Free State, Bloemfontein, ZA9300, South Africa.
Department of Physics, University of the Free State, Bloemfontein, ZA9300, South Africa; Department of Chemical Engineering, Indian Institute of Technology Kanpur, Kanpur, 208016, India.
Colloids Surf B Biointerfaces. 2017 Nov 1;159:191-199. doi: 10.1016/j.colsurfb.2017.07.071. Epub 2017 Jul 29.
The Ag doped ZnO (ZnO:Ag) NPs with a hexagonal wurtzite structure were synthesized by a solution combustion method. X-ray absorption near edge structure (XANES) and X-ray photoelectron spectroscopy (XPS) were used to study the defects, local electronic and atomic structures before and after Ag doping. XPS and XANES studies confirmed the deficiency of concentration of defects in ZnO after Ag doping. The photoluminescence study showed the deep level emission in the orange-red region in addition to the band to band emission. It was also found that the defect related emission of ZnO was decreased with an increasing in Ag concentration. The antibacterial behaviour of ZnO and ZnO:Ag NPs was studied against the gram positive and gram negative bacteria. The role of Ag doping and defects in the ZnO NPs were discussed for the observed antibacterial and photoluminescence behaviour.
采用溶液燃烧法合成了具有六方纤锌矿结构的掺银氧化锌（ZnO:Ag）纳米粒子。利用 X 射线吸收近边结构（XANES）和 X 射线光电子能谱（XPS）研究了 Ag 掺杂前后的缺陷、局部电子和原子结构。XPS 和 XANES 研究证实，Ag 掺杂后 ZnO 中缺陷的浓度缺陷减少。光致发光研究表明，除了带带发射之外，在橙红色区域还有深能级发射。还发现，随着 Ag 浓度的增加，ZnO 的缺陷相关发射减少。研究了 ZnO 和 ZnO:Ag NPs 对革兰氏阳性菌和革兰氏阴性菌的抗菌行为。讨论了 Ag 掺杂和 ZnO NPs 中的缺陷在观察到的抗菌和光致发光行为中的作用。
