Condensed Matter Science and Technology Institute, School of Science, Harbin Institute of Technology , Harbin 150080, China.
Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University , University Park, Pennsylvania 16802, United States.
ACS Appl Mater Interfaces. 2017 Sep 6;9(35):29863-29871. doi: 10.1021/acsami.7b08160. Epub 2017 Aug 22.
Both low strain hysteresis and high piezoelectric performance are required for practical applications in precisely controlled piezoelectric devices and systems. Unfortunately, enhanced piezoelectric properties were usually obtained with the presence of a large strain hysteresis in BaTiO (BT)-based piezoceramics. In this work, we propose to integrate crystallographic texturing and domain engineering strategies into BT-based ceramics to resolve this challenge. [001] grain-oriented (BaCa)(TiZr)O (BCTZ) ceramics with a texture degree as high as 98.6% were synthesized by templated grain growth. A very high piezoelectric coefficient (d) of 755 pC/N, and an extremely large piezoelectric strain coefficient (d* = 2027 pm/V) along with an ultralow strain hysteresis (H) of 4.1% were simultaneously achieved in BT-based systems for the first time, which are among the best values ever reported on both lead-free and lead-based piezoceramics. The exceptionally high piezoelectric response is mainly from the reversible contribution, and can be ascribed to the piezoelectric anisotropy, the favorable domain configuration, and the formation of smaller sized domains in the BCTZ textured ceramics. This study paves a new pathway to develop lead-free piezoelectrics with both low strain hysteresis and high piezoelectric coefficient. More importantly, it represents a very exciting discovery with potential application of BT-based ceramics in high-precision piezoelectric actuators.
在精确控制的压电设备和系统中,既需要低应变滞后,又需要高压电性能。不幸的是,在基于 BaTiO(BT)的压电陶瓷中,增强的压电性能通常伴随着较大的应变滞后。在这项工作中,我们提出将晶体织构和畴工程策略集成到基于 BT 的陶瓷中,以解决这一挑战。通过模板晶粒生长合成了织构度高达 98.6%的[001]取向(BaCa)(TiZr)O(BCTZ)陶瓷。首次在 BT 基系统中同时实现了非常高的压电系数(d)为 755 pC/N,以及极高的压电应变系数(d* = 2027 pm/V)和超低的应变滞后(H)为 4.1%,这是在无铅和含铅压电陶瓷中报道的最佳值之一。异常高的压电响应主要来自于可逆贡献,可以归因于压电各向异性、有利的畴结构以及在 BCTZ 织构陶瓷中形成较小尺寸的畴。这项研究为开发具有低应变滞后和高压电系数的无铅压电陶瓷开辟了新途径。更重要的是,它代表了一个非常令人兴奋的发现,具有潜在的基于 BT 的陶瓷在高精度压电致动器中的应用。