Sorbonne Universités, UPMC Univ Paris 06 , UMR 7614, Laboratoire de Chimie Physique Matière et Rayonnement (LCPMR), F-75005 Paris, France.
Sorbonne Universités, UPMC Univ Paris 06 , UMR 8232, Institut Parisien de Chimie Moléculaire (IPCM), F-75005 Paris, France.
ACS Appl Mater Interfaces. 2017 Sep 13;9(36):30992-31004. doi: 10.1021/acsami.7b06691. Epub 2017 Aug 31.
2,2',6,6'-Tetraphenyl-4,4'-dipyranylidene (DIPO-Ph) was grown by vacuum deposition on an indium tin oxide (ITO) substrate. The films were characterized by atomic force microscopy as well as synchrotron radiation UV and X-ray photoelectron spectroscopy to gain an insight into the material growth and to better understand the electronic properties of the ITO/DIPO-Ph interface. To interpret our spectroscopic data, we consider the formation of cationic DIPO-Ph at the ITO interface owing to a charge transfer from the organic layer to the substrate. Ionization energy DFT calculations of the neutral and cationic species substantiate this hypothesis. Finally, we present the energetic diagram of the ITO/DIPO-Ph system, and we discuss the application of this interface in various technologically relevant systems, as a hole-injector in OLEDs or as a hole-collector interfacial layer adjacent to the prototypical OPV layer P3HT:PCBM.
2,2',6,6'-四苯基-4,4'-二吡喃亚基（DIPO-Ph）通过真空沉积在氧化铟锡（ITO）基底上生长。通过原子力显微镜以及同步辐射紫外光和 X 射线光电子能谱对薄膜进行了表征，以深入了解材料的生长过程，并更好地理解 ITO/DIPO-Ph 界面的电子特性。为了解释我们的光谱数据，我们考虑了由于有机层向基底的电荷转移而在 ITO 界面上形成的阳离子 DIPO-Ph。中性和阳离子物种的电离能 DFT 计算证实了这一假设。最后，我们给出了 ITO/DIPO-Ph 体系的能级图，并讨论了该界面在各种相关技术系统中的应用，例如在 OLED 中作为空穴注入剂，或作为与典型的 OPV 层 P3HT:PCBM 相邻的空穴收集器界面层。
