State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , Changchun 130033 , P. R. China.
University of Chinese Academy of Sciences , Beijing 100049 , P. R. China.
ACS Appl Mater Interfaces. 2018 Mar 14;10(10):8909-8916. doi: 10.1021/acsami.7b19376. Epub 2018 Mar 2.
The electronic level alignment at the indium tin oxide (ITO)/PbI interface is investigated by an ultraviolet photoelectron spectroscopy. An n-type conductivity property is found for PbI as well as a downward shift energy level at the ITO/PbI interface. These indicate that PbI can be used as an anode buffer layer for organic electronic devices. The power conversion efficiency of the organic solar cell based on tetraphenyldibenzoperiflanthene/C planar heterojunction is dramatically increased from 1.05 to 3.82%. Meanwhile, the thermally activated delayed fluorescence organic light-emitting diode based on 4,4',4″-tri( N-carbazolyl)triphenylamine-((1,3,5-triazine-2,4,6-triyl)tris(benzene-3,1-diyl))tris(diphenylphosphine oxide) shows a significantly reduced turn-on voltage and enhanced power efficiency from 6.26 to 18.60 lm/W. The improved performance is attributed to the high hole injection/extraction efficiency at the ITO/PbI interface. Besides, the near-infrared (NIR) absorption of lead phthalocyanine (PbPc)-based NIR organic photodetector (NIR-OPD) is dramatically increased, indicating that the PbI layer can also be used as a template layer for the growth of the triclinic phase of PbPc. As a result, the optimized device shows an external quantum efficiency of 26.7% and a detectivity of 9.96 × 10 jones at 900 nm, which are among the highest ones reported for organic NIR-OPDs.
通过紫外光电子能谱研究了氧化铟锡（ITO）/碘化铅（PbI）界面的电子能级对齐情况。发现 PbI 具有 n 型导电性，并且 ITO/PbI 界面的能级向下移动。这表明 PbI 可用作有机电子器件的阳极缓冲层。基于四苯并二苯并-periflanthene/C 平面异质结的有机太阳能电池的功率转换效率从 1.05 显著提高到 3.82%。同时，基于 4,4',4″-三（N-咔唑基）三苯基胺-（（1,3,5-三嗪-2,4,6-三基）三（苯-3,1-二基））三（二苯基膦氧化物）的热激活延迟荧光有机发光二极管的开启电压显著降低，功率效率从 6.26 提高到 18.60 lm/W。性能的提高归因于 ITO/PbI 界面处的空穴注入/提取效率高。此外，基于铅酞菁（PbPc）的近红外（NIR）有机光电探测器（NIR-OPD）的近红外（NIR）吸收显著增加，表明 PbI 层还可以用作三方相 PbPc 生长的模板层。结果，优化后的器件在 900nm 处的外量子效率为 26.7%，探测率为 9.96×10 琼斯，这在有机近红外光电探测器中属于最高水平之一。
