Ali Haider, Yang Xinbo, Weber Klaus, Schoenfeld Winston V, Davis Kristopher O
Department of Materials Science and Engineering, University of Central Florida, 12760 Pegasus Drive, Engineering I, Suite 207, Orlando, FL 32816, USA.
Florida Solar Energy Center, University of Central Florida, 1679 Clearlake Rd, Cocoa, FL 32922, USA.
Microsc Microanal. 2017 Oct;23(5):900-904. doi: 10.1017/S1431927617012417. Epub 2017 Aug 15.
In this study, the cross-section of electron-selective titanium oxide (TiO2) contacts for n-type crystalline silicon solar cells were investigated by transmission electron microscopy. It was revealed that the excellent cell efficiency of 21.6% obtained on n-type cells, featuring SiO2/TiO2/Al rear contacts and after forming gas annealing (FGA) at 350°C, is due to strong surface passivation of SiO2/TiO2 stack as well as low contact resistivity at the Si/SiO2/TiO2 heterojunction. This can be attributed to the transformation of amorphous TiO2 to a conducting TiO2-x phase. Conversely, the low efficiency (9.8%) obtained on cells featuring an a-Si:H/TiO2/Al rear contact is due to severe degradation of passivation of the a-Si:H upon FGA.
在本研究中，通过透射电子显微镜对n型晶体硅太阳能电池的电子选择性二氧化钛（TiO₂）接触的横截面进行了研究。结果表明，在n型电池上获得的21.6%的优异电池效率，其特征在于SiO₂/TiO₂/Al背接触，并在350°C进行形成气退火（FGA）后，这归因于SiO₂/TiO₂叠层的强表面钝化以及Si/SiO₂/TiO₂异质结处的低接触电阻率。这可归因于非晶TiO₂向导电TiO₂₋ₓ相的转变。相反，具有a-Si:H/TiO₂/Al背接触的电池获得的低效率（9.8%）是由于FGA后a-Si:H钝化的严重退化。
