IEK-5 Photovoltaik, Forschungszentrum Jülich GmbH , 52425 Jülich , Germany.
ACS Appl Mater Interfaces. 2018 May 2;10(17):14259-14263. doi: 10.1021/acsami.8b02002. Epub 2018 Apr 23.
Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO/c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO, in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm were achieved using μc-SiC:H(n)/SiO/c-Si as transparent passivated contacts.
使用宽带隙微晶硅碳化硅（μc-SiC:H(n)）和硅隧道氧化层（SiO）堆叠的透明钝化接触（TPCs）是替代非晶硅基接触的一种选择，用于硅异质结太阳能电池的前侧。在对μc-SiC:H(n)/SiO/c-Si 接触的系统研究中，我们研究了用于形成超薄 SiO 的选定湿化学氧化方法，以在确保低接触电阻率的同时钝化硅表面。通过调整 SiO 的特性，使用μc-SiC:H(n)/SiO/c-Si 作为透明钝化接触，实现了 714 mV 的开路电压和 32 mΩ·cm 的接触电阻率。
