Huang Hu, Zhao Hongwei, Shi Chengli, Zhang Lin, Wan Shunguang, Geng Chunyang
College of Mechanical Science & Engineering, Jilin University, Renmin Street 5988, Changchun 130025, China.
Materials (Basel). 2013 Apr 12;6(4):1496-1505. doi: 10.3390/ma6041496.
Randomness and discreteness for appearance of pop-out of the single crystal silicon with a (100) orientation were studied by a self-made indentation device. For a given maximum penetration load, the load for appearance of pop-out fluctuates in a relatively large range, which makes it hard to study the effect of the loading/unloading rate on the load . Experimental results with different maximum penetration loads indicate that the critical penetration load for appearance of pop-out is in the range of 15 mN20 mN for the current used single crystal silicon. For a given maximum penetration load, the load for appearance of pop-out seems random and discrete, but in the point of statistics, it has an obviously increasing trend with increase of the maximum penetration load and also the fraction / approximately keeps in the range of 0.20.5 for different maximum penetration loads changing from 15 mN to 150 mN.
利用自制的压痕装置研究了具有（100）取向的单晶硅弹出现象的随机性和离散性。对于给定的最大压入载荷，弹出出现时的载荷在相对较大的范围内波动，这使得研究加载/卸载速率对该载荷的影响变得困难。不同最大压入载荷的实验结果表明，对于当前使用的单晶硅，弹出出现时的临界压入载荷在15 mN至20 mN范围内。对于给定的最大压入载荷，弹出出现时的载荷似乎是随机和离散的，但从统计角度来看，它随着最大压入载荷的增加有明显的上升趋势，并且对于从15 mN到150 mN变化的不同最大压入载荷，分数/大致保持在0.2至0.5的范围内。
