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压痕载荷对磷化铟晶体拉曼光谱的影响。

Effect of the Indentation Load on the Raman Spectra of the InP Crystal.

作者信息

Chrobak Dariusz, Dulski Mateusz, Ziółkowski Grzegorz, Chrobak Artur

机构信息

Institute of Materials Engenering, Faculty of Science and Technology, University of Silesia in Katowice, 75 Pułku Piechoty 1A, 41-500 Chorzow, Poland.

Institute of Physics, Faculty of Science and Technology, University of Silesia in Katowice, 75 Pułku Piechoty 1A, 41-500 Chorzów, Poland.

出版信息

Materials (Basel). 2022 Jul 22;15(15):5098. doi: 10.3390/ma15155098.

DOI:10.3390/ma15155098
PMID:35897531
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9331096/
Abstract

Nanoindentations and the Raman spectroscopy measurements were carried out on the (001) surface of undoped and S-doped InP crystal. The samples were indented with the maximum load ranging from 15 mN to 100 mN. The phase transition B3→B1 was not confirmed by spectroscopic experiments, indicating a plastic deformation mechanism governed by dislocations activity. Increasing the maximum indentation load shifts and the longitudinal and transverse optical Raman bands to lower frequencies reveals a reduction in the elastic energy stored in the plastic zone right below the indentation imprint. Mechanical experiments have shown that a shift in Raman bands occurs alongside the indentation size effect. Indeed, the hardness of undoped and S-doped InP crystal decreases as a function of the maximum indentation load.

摘要

对未掺杂和硫掺杂的磷化铟晶体的(001)表面进行了纳米压痕和拉曼光谱测量。样品以15毫牛至100毫牛的最大载荷进行压痕。光谱实验未证实B3→B1的相变,这表明塑性变形机制受位错活动控制。增加最大压痕载荷会使纵向和横向光学拉曼带向低频移动,这表明在压痕印记正下方的塑性区中存储的弹性能减少。力学实验表明,拉曼带的移动与压痕尺寸效应同时发生。实际上,未掺杂和硫掺杂的磷化铟晶体的硬度随最大压痕载荷的增加而降低。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/42db/9331096/7483a3ec4d26/materials-15-05098-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/42db/9331096/922b020002ee/materials-15-05098-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/42db/9331096/7483a3ec4d26/materials-15-05098-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/42db/9331096/922b020002ee/materials-15-05098-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/42db/9331096/7483a3ec4d26/materials-15-05098-g003.jpg

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本文引用的文献

1
Monocrystalline InP Thin Films with Tunable Surface Morphology and Energy Band gap.具有可调表面形貌和能带隙的单晶磷化铟薄膜
ACS Appl Mater Interfaces. 2020 Aug 12;12(32):36380-36388. doi: 10.1021/acsami.0c10370. Epub 2020 Jul 31.
2
Pressure effect on impurity local vibrational mode and phase transitions in n-type iron-doped indium phosphide.n 型铁掺杂磷化铟中杂质局域振动模和相变的压力效应。
Sci Rep. 2018 Jan 19;8(1):1284. doi: 10.1038/s41598-018-19679-2.
3
In situ observations of Berkovich indentation induced phase transitions in crystalline silicon films.
晶体硅薄膜中贝氏压痕诱导相变的原位观察。
Scr Mater. 2016 Jul 15;120(2016):19-22. doi: 10.1016/j.scriptamat.2016.04.007. Epub 2016 Apr 19.