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各向异性蚀刻砷化镓中的纳米/微米双纹理抗反射亚波长结构

Nano/micro dual-textured antireflective subwavelength structures in anisotropically etched GaAs.

作者信息

Kim Kyunghwan, Song Yunwon, Oh Jungwoo

出版信息

Opt Lett. 2017 Aug 15;42(16):3105-3108. doi: 10.1364/OL.42.003105.

Abstract

Light trapping by surface texturing is widely used to improve the performance of optoelectronic devices. In this Letter, we demonstrate nano/micro dual-scale textured GaAs by integrating triangular GaAs by orientation-dependent wet etching and subwavelength nanoholes by metal-assisted chemical etching (MacEtch). This is the first report on nano/micro dual-scale textured GaAs. The reflectance was adjusted by controlling the aspect ratio of the nanoholes by varying the MacEtch duration. The combination of the microstructure and subwavelength structures significantly reduced the solar-weighted reflectance of a bare GaAs substrate by 72%.

摘要

通过表面纹理化来捕获光被广泛用于提高光电器件的性能。在本信函中,我们通过将取向依赖的湿法蚀刻形成的三角形GaAs与金属辅助化学蚀刻(MacEtch)形成的亚波长纳米孔相结合,展示了纳米/微米双尺度纹理化的GaAs。这是关于纳米/微米双尺度纹理化GaAs的首次报道。通过改变MacEtch持续时间来控制纳米孔的纵横比,从而调节反射率。微观结构和亚波长结构的组合使裸GaAs衬底的太阳加权反射率显著降低了72%。

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