Kim Byung-Jae, Kim Jihyun
Department of Chemical & Biological Engineering, Korea University, Seoul, South Korea.
Opt Express. 2011 May 9;19 Suppl 3:A326-30. doi: 10.1364/OE.19.00A326.
We developed a novel GaAs subwavelength structure (SWS) as an antireflective layer for solar cell applications. The GaAs SWS patterns were fabricated by a combination of nanosphere lithography (NSL) and reactive ion etching (RIE). The shape and height of the GaAs SWS were controlled by the diameter of the SiO2 nanospheres and the etching time. Various GaAs SWS were characterized by the reflectance spectra. The average reflectance of the polished GaAs substrate from 200nm to 800nm was 35.1%. However, the average reflectance of the tapered GaAs SWS was reduced to 0.6% due to scattering and moth-eye effects.
我们开发了一种新型的砷化镓亚波长结构（SWS）作为太阳能电池应用的抗反射层。砷化镓SWS图案通过纳米球光刻（NSL）和反应离子蚀刻（RIE）相结合的方法制造。砷化镓SWS的形状和高度由二氧化硅纳米球的直径和蚀刻时间控制。通过反射光谱对各种砷化镓SWS进行了表征。抛光砷化镓衬底在200nm至800nm的平均反射率为35.1%。然而，由于散射和蛾眼效应，锥形砷化镓SWS的平均反射率降低到了0.6%。
