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高温下具有数十微米级尺寸的 CHNHPbI 薄膜的制备。

Preparation of CHNHPbI thin films with tens of micrometer scale at high temperature.

机构信息

School of Physics, Southeast University, Nanjing, 211189, China.

National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China.

出版信息

Sci Rep. 2017 Aug 16;7(1):8458. doi: 10.1038/s41598-017-09109-0.

Abstract

The fabrication of high-quality organic-inorganic hybrid halide perovskite layers is the key prerequisite for the realization of high efficient photon energy harvest and electric energy conversion in their related solar cells. In this article, we report a novel fabrication technique of CHNHPbI layers based on high temperature chemical vapor reaction. CHNHPbI layers have been prepared by the reaction of PbI films which were deposited by pulsed laser deposition, with CHNHI vapor at various temperatures from 160 °C to 210 °C. X-ray diffraction patterns confirm the formation of pure phase, and photoluminescence spectra show the strong peak at around 760 nm. Scanning electron microscopy images confirm the significantly increased average grain size from nearly 1 μm at low reaction temperature of 160 °C to more than 10 μm at high reaction temperature of 200 °C. The solar cells were fabricated, and short-circuit current density of 15.75 mA/cm, open-circuit voltage of 0.49 V and fill factor of 71.66% have been obtained.

摘要

高质量的有机-无机卤化物钙钛矿层的制备是实现其相关太阳能电池中高效光子能量收集和电能转换的关键前提。本文报道了一种基于高温化学气相反应的新型 CHNHPbI 层制备技术。通过脉冲激光沉积制备的 PbI 薄膜与 CHNHI 蒸汽在 160°C 至 210°C 的不同温度下反应,制备了 CHNHPbI 层。X 射线衍射图谱证实了纯相的形成,光致发光光谱显示在约 760nm 处有强峰。扫描电子显微镜图像证实,反应温度从 160°C 的低温增加到 200°C 的高温时,平均晶粒尺寸从近 1μm 显著增加到 10μm 以上。制备了太阳能电池,获得了 15.75mA/cm 的短路电流密度、0.49V 的开路电压和 71.66%的填充因子。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c7e4/5559451/8197c1eb7774/41598_2017_9109_Fig1_HTML.jpg

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