Behzad Kasra, Mat Yunus Wan Mahmood, Talib Zainal Abidin, Zakaria Azmi, Bahrami Afarin
Department of Physics, Science Faculty, Universiti Putra Malaysia, Serdang, Selangor 43400 UPM, Malaysia.
Materials (Basel). 2012 Jan 16;5(1):157-168. doi: 10.3390/ma5010157.
Porous silicon (PSi) layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm² fixed current density for different etching times. The samples were coated with a 50-60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron microscopy (SEM). Photoacoustic spectroscopy (PAS) measurements were carried out to measure the thermal diffusivity (TD) of the PSi and Au/PSi samples. For the Au/PSi samples, the thermal diffusivity was measured before and after annealing to study the effect of annealing. Also to study the aging effect, a comparison was made between freshly annealed samples and samples 30 days after annealing.
在p型硅片上形成多孔硅（PSi）层。六个样品以30 mA/cm²的固定电流密度进行不同蚀刻时间的电阳极氧化。样品涂覆有50 - 60 nm的金层，并在氩气流下于不同温度退火。通过扫描电子显微镜（SEM）研究以此方法形成的层在退火前后的形貌。进行光声光谱（PAS）测量以测量PSi和Au/PSi样品的热扩散率（TD）。对于Au/PSi样品，在退火前后测量热扩散率以研究退火的影响。为了研究老化效应，还对刚退火的样品和退火30天后的样品进行了比较。
