Volovlikova Olga, Gavrilov Sergey, Lazarenko Petr
Institute of Advanced Materials and Technologies, National Research University of Electronic Technology(MIET), Moscow 124498, Russia.
Micromachines (Basel). 2020 Feb 14;11(2):199. doi: 10.3390/mi11020199.
The influence of illumination intensity and p-type silicon doping level on the dissolution rate of Si and total current by photo-assisted etching was studied. The impact of etching duration, illumination intensity, and wafer doping level on the etching process was investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), and Ultraviolet-Visible Spectroscopy (UV-Vis-NIR). The silicon dissolution rate was found to be directly proportional to the illumination intensity and inversely proportional to the wafer resistivity. High light intensity during etching treatment led to increased total current on the Si surface. It was shown that porous silicon of different thicknesses, pore diameters, and porosities can be effectively fabricated by photo-assisted etching on a Si surface without external bias or metals.
研究了光照强度和p型硅掺杂水平对光辅助刻蚀中硅溶解速率和总电流的影响。使用扫描电子显微镜（SEM）、原子力显微镜（AFM）和紫外-可见光谱（UV-Vis-NIR）研究了刻蚀持续时间、光照强度和晶圆掺杂水平对刻蚀过程的影响。发现硅溶解速率与光照强度成正比，与晶圆电阻率成反比。刻蚀处理期间的高光强度导致硅表面的总电流增加。结果表明，通过在无外部偏压或金属的硅表面进行光辅助刻蚀，可以有效地制备出不同厚度、孔径和孔隙率的多孔硅。
