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用于气体分析多传感器阵列芯片的氧化锡纳米结构层的动电位自下而上生长

The Potentiodynamic Bottom-up Growth of the Tin Oxide Nanostructured Layer for Gas-Analytical Multisensor Array Chips.

作者信息

Fedorov Fedor S, Podgainov Dmitry, Varezhnikov Alexey, Lashkov Andrey, Gorshenkov Michail, Burmistrov Igor, Sommer Martin, Sysoev Victor

机构信息

Laboratory of Nanomaterials, Skolkovo Institute of Science and Technology, Skolkovo Innovation Center, 3 Nobel Str., 143026 Moscow, Russia.

Laboratory of Sensors and Microsystems, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya str., 410054 Saratov, Russia.

出版信息

Sensors (Basel). 2017 Aug 18;17(8):1908. doi: 10.3390/s17081908.

DOI:10.3390/s17081908
PMID:28820490
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5579809/
Abstract

We report a deposition of the tin oxide/hydroxide nanostructured layer by the potentiodynamic method from acidic nitrate solutions directly over the substrate, equipped with multiple strip electrodes which is employed as a gas-analytical multisensor array chip. The electrochemical synthesis is set to favor the growth of the tin oxide/hydroxide phase, while the appearance of metallic Sn is suppressed by cycling. The as-synthesized tin oxide/hydroxide layer is characterized by mesoporous morphology with grains, 250-300 nm diameter, which are further crystallized into fine SnO₂ poly-nanocrystals following heating to 300 °C for 24 h just on the chip. The fabricated layer exhibits chemiresistive properties under exposure to organic vapors, which allows the generation of a multisensor vector signal capable of selectively distinguishing various vapors.

摘要

我们报道了通过恒电位法从酸性硝酸盐溶液中直接在配备有多条带状电极的基底上沉积氧化锡/氢氧化锡纳米结构层,该基底用作气体分析多传感器阵列芯片。电化学合成有利于氧化锡/氢氧化锡相的生长,同时通过循环抑制金属锡的出现。合成的氧化锡/氢氧化锡层具有介孔形态,晶粒直径为250 - 300 nm,在芯片上加热至300°C 24小时后进一步结晶为细小的SnO₂多纳米晶体。所制备的层在暴露于有机蒸汽时表现出化学电阻特性,这使得能够产生能够选择性区分各种蒸汽的多传感器矢量信号。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/683c/5579809/6b4f34f42589/sensors-17-01908-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/683c/5579809/b578114fdaf8/sensors-17-01908-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/683c/5579809/43352a048c5f/sensors-17-01908-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/683c/5579809/95c02b8bbb50/sensors-17-01908-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/683c/5579809/7cd3a734dbbf/sensors-17-01908-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/683c/5579809/1cd152082c4d/sensors-17-01908-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/683c/5579809/6b4f34f42589/sensors-17-01908-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/683c/5579809/b578114fdaf8/sensors-17-01908-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/683c/5579809/43352a048c5f/sensors-17-01908-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/683c/5579809/95c02b8bbb50/sensors-17-01908-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/683c/5579809/7cd3a734dbbf/sensors-17-01908-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/683c/5579809/1cd152082c4d/sensors-17-01908-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/683c/5579809/6b4f34f42589/sensors-17-01908-g006.jpg

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