Kim Sangsik, Han Kyunghun, Wang Cong, Jaramillo-Villegas Jose A, Xue Xiaoxiao, Bao Chengying, Xuan Yi, Leaird Daniel E, Weiner Andrew M, Qi Minghao
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA.
Birck Nanotechnology Center, Purdue University, West Lafayette, IN, 47907, USA.
Nat Commun. 2017 Aug 29;8(1):372. doi: 10.1038/s41467-017-00491-x.
Kerr nonlinearity-based frequency combs and solitons have been generated from on-chip microresonators. The initiation of the combs requires global or local anomalous dispersion which leads to many limitations, such as material choice, film thickness, and spectral ranges where combs can be generated, as well as fabrication challenges. Using a concentric racetrack-shaped resonator, we show that such constraints can be lifted and resonator dispersion can be engineered to be anomalous over moderately broad bandwidth. We demonstrate anomalous dispersion in a 300 nm thick silicon nitride film, suitable for semiconductor manufacturing but previously thought to result in waveguides with high normal dispersion. Together with a mode-selective, tapered coupling scheme, we generate coherent mode-locked frequency combs. Our method can realize anomalous dispersion for resonators at almost any wavelength and simultaneously achieve material and process compatibility with semiconductor manufacturing.Kerr frequency comb generation from microresonators requires anomalous dispersion, imposing restrictions on materials and resonator design. Here, Kim et al. propose a concentric racetrack-resonator design where the dispersion can be engineered to be anomalous via resonant mode coupling.
基于克尔非线性效应的频率梳和孤子已在片上微谐振器中产生。频率梳的产生需要全局或局部反常色散,这会导致诸多限制,如材料选择、薄膜厚度、能够产生频率梳的光谱范围,以及制造方面的挑战。通过使用同心跑道形谐振器,我们表明这些限制可以被消除,并且谐振器色散可以被设计为在适度宽的带宽上呈现反常色散。我们在厚度为300纳米的氮化硅薄膜中展示了反常色散,这种薄膜适用于半导体制造,但此前被认为会导致具有高正常色散的波导。结合模式选择型锥形耦合方案,我们产生了相干锁模频率梳。我们的方法几乎可以在任何波长下为谐振器实现反常色散,同时实现与半导体制造的材料和工艺兼容性。从微谐振器产生克尔频率梳需要反常色散,这对材料和谐振器设计施加了限制。在此,金等人提出了一种同心跑道形谐振器设计,其中色散可以通过谐振模式耦合设计为反常色散。