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解析控制拟南芥根部到地上部砷迁移的成分。

Dissecting the components controlling root-to-shoot arsenic translocation in Arabidopsis thaliana.

机构信息

State Key Laboratory of Crop Genetics and Germplasm Enhancement, College of Resources and Environmental Sciences, Nanjing Agricultural University, Nanjing, 210095, China.

Department of Botany and Plant Pathology, Purdue University, West Lafayette, IN, 47907, USA.

出版信息

New Phytol. 2018 Jan;217(1):206-218. doi: 10.1111/nph.14761. Epub 2017 Aug 31.

Abstract

Arsenic (As) is an important environmental and food-chain toxin. We investigated the key components controlling As accumulation and tolerance in Arabidopsis thaliana. We tested the effects of different combinations of gene knockout, including arsenate reductase (HAC1), γ-glutamyl-cysteine synthetase (γ-ECS), phytochelatin synthase (PCS1) and phosphate effluxer (PHO1), and the heterologous expression of the As-hyperaccumulator Pteris vittata arsenite efflux (PvACR3), on As tolerance, accumulation, translocation and speciation in A. thaliana. Heterologous expression of PvACR3 markedly increased As tolerance and root-to-shoot As translocation in A. thaliana, with PvACR3 being localized to the plasma membrane. Combining PvACR3 expression with HAC1 mutation led to As hyperaccumulation in the shoots, whereas combining HAC1 and PHO1 mutation decreased As accumulation. Mutants of γ-ECS and PCS1 were hypersensitive to As and had higher root-to-shoot As translocation. Combining γ-ECS or PCS1 with HAC1 mutation did not alter As tolerance or accumulation beyond the levels observed in the single mutants. PvACR3 and HAC1 have large effects on root-to-shoot As translocation. Arsenic hyperaccumulation can be engineered in A. thaliana by knocking out the HAC1 gene and expressing PvACR3. PvACR3 and HAC1 also affect As tolerance, but not to the extent of γ-ECS and PCS1.

摘要

砷(As)是一种重要的环境和食物链毒素。我们研究了控制拟南芥中砷积累和耐受的关键成分。我们测试了不同基因敲除组合的效果,包括砷酸盐还原酶(HAC1)、γ-谷氨酰半胱氨酸合成酶(γ-ECS)、植物螯合肽合成酶(PCS1)和磷酸盐外排泵(PHO1),以及砷超积累植物凤尾蕨砷外排(PvACR3)的异源表达,对拟南芥中砷的耐受性、积累、转运和形态进行了研究。PvACR3 的异源表达显著提高了拟南芥对砷的耐受性和根到茎的砷转运,PvACR3 定位于质膜。将 PvACR3 表达与 HAC1 突变结合导致 shoots 中砷的超积累,而将 HAC1 和 PHO1 突变结合则降低了砷的积累。γ-ECS 和 PCS1 突变体对砷敏感,根到茎的砷转运更高。将 γ-ECS 或 PCS1 与 HAC1 突变结合不会改变单突变体中观察到的砷耐受性或积累水平。PvACR3 和 HAC1 对根到茎的砷转运有很大的影响。通过敲除 HAC1 基因和表达 PvACR3,可以在拟南芥中实现砷的超积累。PvACR3 和 HAC1 也影响砷的耐受性,但不如 γ-ECS 和 PCS1 明显。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c121/6260828/1e88591936dc/nihms-984761-f0001.jpg

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