Andresen N C, Denes P, Goldschmidt A, Joseph J, Karcher A, Tindall C S
Lawrence Berkeley National Laboratory (LBNL), 1 Cyclotron Road, Berkeley, California 94720, USA.
Rev Sci Instrum. 2017 Aug;88(8):083103. doi: 10.1063/1.4997727.
We have developed a charge-coupled device (CCD) with 5 μm × 45 μm pixels on high-resistivity silicon. The fully depleted 200 μm-thick silicon detector is back-illuminated through a 10 nm-thick in situ doped polysilicon window and is thus highly efficient for soft through >8 keV hard X-rays. The device described here is a 1.5 megapixel CCD with 2496 × 620 pixels. The pixel and camera geometry was optimized for Resonant Inelastic X-ray Scattering (RIXS) and is particularly advantageous for spectrometers with limited arm lengths. In this article, we describe the device architecture, construction and operation, and its performance during tests at the Advance Light Source (ALS) 8.0.1 RIXS beamline. The improved spectroscopic performance, when compared with a current standard commercial camera, is demonstrated with a ∼280 eV (C) X-ray beam on a graphite sample. Readout noise is typically 3-6 electrons and the point spread function for soft C X-rays in the 5 μm direction is 4.0 μm ± 0.2 μm. The measured quantum efficiency of the CCD is greater than 75% in the range from 200 eV to 1 keV.
我们在高电阻率硅上开发了一种像素尺寸为5μm×45μm的电荷耦合器件（CCD）。这种200μm厚的完全耗尽型硅探测器通过一个10nm厚的原位掺杂多晶硅窗口进行背照式照明，因此对于能量大于8keV的软X射线到硬X射线都具有很高的效率。这里描述的器件是一个拥有2496×620像素的150万像素CCD。该像素和相机的几何结构针对共振非弹性X射线散射（RIXS）进行了优化，对于臂长有限的光谱仪尤为有利。在本文中，我们描述了该器件的架构、构造和操作，以及它在先进光源（ALS）8.0.1 RIXS光束线测试期间的性能。在对石墨样品使用约280eV（C）的X射线束时，与当前标准商业相机相比，展示了其改进的光谱性能。读出噪声通常为3 - 6个电子，5μm方向上软C X射线的点扩散函数为4.0μm±0.2μm。在200eV至1keV范围内，测量得到的CCD量子效率大于75%。
