Bala Manju, Gupta Srashti, Srivastava Sanjeev K, Amrithapandian Sankarakumar, Tripathi Tripurari S, Tripathi Surya K, Dong Chung-Li, Chen Chi-Liang, Avasthi Devesh K, Asokan Kandasami
Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110067, India.
Phys Chem Chem Phys. 2017 Sep 20;19(36):24886-24895. doi: 10.1039/c7cp03527f.
Skutterudites are emerging as potential candidates that show high efficiency and thus provide an ideal platform for research. The properties of nanostructured films of skutterudites are different from those of the corresponding bulk. The present study reports the evolution of nanostructured single-phase CoSb fabricated by using low-energy ion irradiation of Co/Sb bilayer films and subsequent annealing at an optimized temperature and their Seebeck coefficients (S). The effects of ion beam parameters with annealing on the phase evolution and nanostructure modifications were studied. An increase in Xe ion fluence resulted in complete mixing of Co/Sb on postannealing forming flower-like nanostructures of single phase CoSb. The temperature-dependent electrical resistivity (ρ) increases with the ion fluence because of defect creation which further increases on postannealing due to surface nanostructuring. The S of these films of CoSb is found to be higher and this is attributed to the formation of a uniform layer of nanostructured CoSb alloy thin film. The S and Hall coefficients of all these films are negative implying that they are n-type semiconductors.
方钴矿正成为具有高效率的潜在候选材料，从而为研究提供了一个理想的平台。方钴矿纳米结构薄膜的性质与相应块体的性质不同。本研究报告了通过对Co/Sb双层薄膜进行低能离子辐照并随后在优化温度下退火制备的纳米结构单相CoSb的演变及其塞贝克系数（S）。研究了离子束参数与退火对相演变和纳米结构改性的影响。Xe离子注量的增加导致退火后Co/Sb完全混合，形成单相CoSb的花状纳米结构。由于缺陷的产生，与温度相关的电阻率（ρ）随离子注量增加，并且由于表面纳米结构化，在退火后进一步增加。发现这些CoSb薄膜的S更高，这归因于形成了均匀的纳米结构CoSb合金薄膜层。所有这些薄膜的S和霍尔系数均为负，这意味着它们是n型半导体。
