Li Dou, Shi Xiao-Lei, Zhu Jiaxi, Cao Tianyi, Ma Xiao, Li Meng, Han Zhuokun, Feng Zhenyu, Chen Yixing, Wang Jianyuan, Liu Wei-Di, Zhong Hong, Li Shuangming, Chen Zhi-Gang
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, 710072, P. R. China.
School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland, 4000, Australia.
Nat Commun. 2024 May 18;15(1):4242. doi: 10.1038/s41467-024-48677-4.
P-type FeCoSb-based skutterudite thin films are successfully fabricated, exhibiting high thermoelectric performance, stability, and flexibility at medium-to-high temperatures, based on preparing custom target materials and employing advanced pulsed laser deposition techniques to address the bonding challenge between the thin films and high-temperature flexible polyimide substrates. Through the optimization of fabrication processing and nominal doping concentration of Ce, the thin films show a power factor of >100 μW m K and a ZT close to 0.6 at 653 K. After >2000 bending cycle tests at a radius of 4 mm, only a 6 % change in resistivity can be observed. Additionally, the assembled p-type FeCoSb-based flexible device exhibits a power density of 135.7 µW cm under a temperature difference of 100 K with the hot side at 623 K. This work fills a gap in the realization of flexible thermoelectric devices in the medium-to-high-temperature range and holds significant practical application value.
通过制备定制靶材并采用先进的脉冲激光沉积技术来解决薄膜与高温柔性聚酰亚胺衬底之间的键合难题，成功制备出了基于P型FeCoSb的方钴矿薄膜，该薄膜在中高温下表现出高热电性能、稳定性和柔韧性。通过优化制备工艺和Ce的名义掺杂浓度，这些薄膜在653 K时显示出大于100 μW m K的功率因子和接近0.6的ZT值。在半径为4 mm的情况下进行超过2000次弯曲循环测试后，仅观察到电阻率有6%的变化。此外，组装的基于P型FeCoSb的柔性器件在100 K的温差下，热端温度为623 K时，功率密度为135.7 μW cm 。这项工作填补了中高温范围内柔性热电器件实现方面的空白，具有重要的实际应用价值。
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