Shang Jingzhi, Cong Chunxiao, Wang Zilong, Peimyoo Namphung, Wu Lishu, Zou Chenji, Chen Yu, Chin Xin Yu, Wang Jianpu, Soci Cesare, Huang Wei, Yu Ting
NanjingTech-NTU Joint Center of Research and Development, Nanjing Tech University, Nanjing, 211816, China.
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
Nat Commun. 2017 Sep 14;8(1):543. doi: 10.1038/s41467-017-00743-w.
Two-dimensional (2D) semiconductors are opening a new platform for revitalizing widely spread optoelectronic applications. The realisation of room-temperature vertical 2D lasing from monolayer semiconductors is fundamentally interesting and highly desired for appealing on-chip laser applications such as optical interconnects and supercomputing. Here, we present room-temperature low-threshold lasing from 2D semiconductor activated vertical-cavity surface-emitting lasers (VCSELs) under continuous-wave pumping. 2D lasing is achieved from a 2D semiconductor. Structurally, dielectric oxides were used to construct the half-wavelength-thick cavity and distributed Bragg reflectors, in favour of single-mode operation and ultralow optical loss; in the cavity centre, the direct-bandgap monolayer WS was embedded as the gain medium, compatible with the planar VCSEL configuration and the monolithic integration technology. This work demonstrates 2D semiconductor activated VCSELs with desirable emission characteristics, which represents a major step towards practical optoelectronic applications of 2D semiconductor lasers.Two-dimensional materials have recently emerged as interesting materials for optoelectronic applications. Here, Shang et al. demonstrate two-dimensional semiconductor activated vertical-cavity surface-emitting lasers where both the gain material and the lasing characteristics are two-dimensional.
二维（2D）半导体正在为振兴广泛应用的光电子应用开辟一个新平台。实现单层半导体在室温下的垂直2D激光发射，从根本上来说很有趣，并且对于诸如光互连和超级计算等引人注目的片上激光应用来说是非常需要的。在此，我们展示了在连续波泵浦下，二维半导体激活的垂直腔面发射激光器（VCSEL）在室温下的低阈值激光发射。二维激光发射是由二维半导体实现的。在结构上，使用介电氧化物来构建半波长厚的腔和分布布拉格反射器，有利于单模操作和超低光损耗；在腔中心，嵌入直接带隙的单层WS作为增益介质，与平面VCSEL结构和单片集成技术兼容。这项工作展示了具有理想发射特性的二维半导体激活VCSEL，这代表了二维半导体激光器在实际光电子应用方面迈出的重要一步。二维材料最近已成为光电子应用中令人感兴趣的材料。在此，尚等人展示了二维半导体激活的垂直腔面发射激光器，其中增益材料和激光发射特性都是二维的。
