Gębski M, Lott J A, Czyszanowski T
Opt Express. 2019 Mar 4;27(5):7139-7146. doi: 10.1364/OE.27.007139.
We achieve the continuous-wave (CW) lasing of electrically-injected, first-of-their-kind vertical-cavity surface-emitting lasers (VCSELs) that use a subwavelength monolithic high-refractive-index-contrast grating (MHCG) mirror. The MHCG, unlike the well-known high-refractive-index-contrast grating (HCG) is neither a membrane suspended in the air nor a structure that requires a cladding layer. The MHCG is patterned in a semiconductor material atop the VCSEL cavity creating an all-semiconductor laser. Static measurements show CW operation of the VCSELs from room temperature up to 75 °C. The VCSEL with a 13.5 μm current oxide aperture diameter operates with quasi-single mode emission from threshold to rollover. Our results open a way to produce all-semiconductor surface emitting lasers emitting at wavelengths from the ultraviolet and the visible (GaN-based) to the infrared (InP- and GaSb-based) with a reduced vertical thickness and thus we believe the manufacturing costs potentially will be reduced by approximately up to about 90% in comparison to the typical DBR VCSELs. Our VCSELs have immediate and emerging applications in optical communication, illumination, sensing, and as light sources in photonic integrated circuits.
我们实现了电注入的垂直腔面发射激光器（VCSEL）的连续波（CW）激射，这种激光器采用了亚波长单片高折射率对比度光栅（MHCG）镜，是同类中的首创。与著名的高折射率对比度光栅（HCG）不同，MHCG既不是悬浮在空气中的薄膜，也不是需要包层的结构。MHCG在VCSEL腔顶部的半导体材料中形成图案，从而制造出全半导体激光器。静态测量表明，VCSEL在室温至75°C范围内都能实现连续波工作。具有13.5μm电流氧化孔径直径的VCSEL从阈值到翻转都以准单模发射工作。我们的研究结果为制造全半导体表面发射激光器开辟了一条道路，这些激光器可在从紫外和可见光（基于GaN）到红外（基于InP和GaSb）的波长范围内发射，且垂直厚度减小，因此我们认为与典型的分布布拉格反射（DBR）VCSEL相比，制造成本可能会降低约90%。我们的VCSEL在光通信、照明、传感以及作为光子集成电路中的光源等方面有着直接且新兴的应用。
