Hong Sung-Jei, Song Sang-Hyun, Kim Byeong Jun, Lee Jae-Yong, Kim Young-Sung
Display Materials and Components Research Center, Korea Electronics Technology Institute, Seongnam, South Korea.
Han Chung RF Co., Ltd, Incheon, South Korea.
Nano Converg. 2017;4(1):23. doi: 10.1186/s40580-017-0117-y. Epub 2017 Sep 6.
In this study, ITO nanoparticles (ITO-NPs) were reused from ITO target scraps to synthesize low cost ITO-NPs and to apply to make sputtering target for transparent conductive electrodes (TCEs). By controlling heat-treatment temperature as 980 °C, we achieved reused ITO-NPs having Brunauer, Emmett and Teller specific surface area (BET SSA) and average particle size 8.05 m/g and 103.8 nm, respectively. The BET SSA decreases along with increasing heat-treatment temperature. The ITO-NPs were grown as round mound shape, and highly crystallized to (222) preferred orientations. Also, applying the reused ITO-NPs, we achieved an ITO target of which density was 99.6%. Using the ITO target, we achieved high quality TCE layer of which sheet resistance and optical transmittance at 550 nm were 29.5 Ω/sq. and 82.3%. Thus, it was confirmed that the reused ITO-NPs was feasible to sputtering target for TCEs layer.
在本研究中,从氧化铟锡(ITO)靶材废料中回收ITO纳米颗粒(ITO-NPs),以合成低成本的ITO-NPs,并将其应用于制备透明导电电极(TCEs)的溅射靶材。通过将热处理温度控制在980℃,我们得到了比表面积(BET SSA)为8.05 m²/g、平均粒径为103.8 nm的回收ITO-NPs。BET SSA随热处理温度的升高而降低。ITO-NPs生长为圆形丘状,并高度结晶为(222)择优取向。此外,使用回收的ITO-NPs,我们制备了密度为99.6%的ITO靶材。使用该ITO靶材,我们制备了高质量的TCE层,其在550 nm处的方块电阻和光学透过率分别为29.5 Ω/sq.和82.3%。因此,证实了回收的ITO-NPs可用于制备TCEs层的溅射靶材。