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从氧化铟锡废料中回收的氧化铟锡纳米颗粒及其在透明导电电极层溅射靶材中的应用。

ITO nanoparticles reused from ITO scraps and their applications to sputtering target for transparent conductive electrode layer.

作者信息

Hong Sung-Jei, Song Sang-Hyun, Kim Byeong Jun, Lee Jae-Yong, Kim Young-Sung

机构信息

Display Materials and Components Research Center, Korea Electronics Technology Institute, Seongnam, South Korea.

Han Chung RF Co., Ltd, Incheon, South Korea.

出版信息

Nano Converg. 2017;4(1):23. doi: 10.1186/s40580-017-0117-y. Epub 2017 Sep 6.

Abstract

In this study, ITO nanoparticles (ITO-NPs) were reused from ITO target scraps to synthesize low cost ITO-NPs and to apply to make sputtering target for transparent conductive electrodes (TCEs). By controlling heat-treatment temperature as 980 °C, we achieved reused ITO-NPs having Brunauer, Emmett and Teller specific surface area (BET SSA) and average particle size 8.05 m/g and 103.8 nm, respectively. The BET SSA decreases along with increasing heat-treatment temperature. The ITO-NPs were grown as round mound shape, and highly crystallized to (222) preferred orientations. Also, applying the reused ITO-NPs, we achieved an ITO target of which density was 99.6%. Using the ITO target, we achieved high quality TCE layer of which sheet resistance and optical transmittance at 550 nm were 29.5 Ω/sq. and 82.3%. Thus, it was confirmed that the reused ITO-NPs was feasible to sputtering target for TCEs layer.

摘要

在本研究中,从氧化铟锡(ITO)靶材废料中回收ITO纳米颗粒(ITO-NPs),以合成低成本的ITO-NPs,并将其应用于制备透明导电电极(TCEs)的溅射靶材。通过将热处理温度控制在980℃,我们得到了比表面积(BET SSA)为8.05 m²/g、平均粒径为103.8 nm的回收ITO-NPs。BET SSA随热处理温度的升高而降低。ITO-NPs生长为圆形丘状,并高度结晶为(222)择优取向。此外,使用回收的ITO-NPs,我们制备了密度为99.6%的ITO靶材。使用该ITO靶材,我们制备了高质量的TCE层,其在550 nm处的方块电阻和光学透过率分别为29.5 Ω/sq.和82.3%。因此,证实了回收的ITO-NPs可用于制备TCEs层的溅射靶材。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a41d/6141858/eeef13c3db18/40580_2017_117_Fig1_HTML.jpg

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