Winnicki Marcin, Wiatrowski Artur, Mazur Michał
Department of Metal Forming, Welding and Metrology, Wrocław University of Science and Technology, Lukasiewicza 5, 50-371 Wroclaw, Poland.
Department of Microelectronics and Nanotechnology, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland.
Materials (Basel). 2021 Mar 5;14(5):1228. doi: 10.3390/ma14051228.
High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying InO and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite InO/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30-40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O mixture, together with the lowest resistivity of 0.03 Ω·cm.
采用高功率脉冲磁控溅射(HiPIMS)在低衬底温度下沉积氧化铟锡(ITO)透明薄膜。通过低压冷喷涂工艺自行制备了一种混合型复合靶材。在喷涂之前,将氧化铟(InO)和氧化锡粉末按体积比3:1混合。复合InO/Sn涂层的平均厚度为900μm。HiPIMS工艺在氩气(Ar)与氧气(O₂)的各种混合比例下进行:(i)100:0体积%,(ii)90:10体积%,(iii)75:25体积%,(iv)50:50体积%,以及(v)0:100体积%。富氧气氛对于氧化锡原子是必要的。自行设计的、能够从外部高压电源为20μF电容器组充电的简单高压电源开关用作不平衡磁控管源的电源。在900V的300次沉积脉冲和900s的沉积时间后,获得了厚度在30 - 40nm范围内的ITO薄膜。在λ = 550nm时,0:100体积%的Ar:O₂混合比例提供了最高88%的透过率,以及最低0.03Ω·cm的电阻率。