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二氧化硅上大规模单取向石墨烯的费米面图。

Fermi surface map of large-scale single-orientation graphene on SiO.

作者信息

Miniussi E, Bernard C, Cun H Y, Probst B, Leuenberger D, Mette G, Zabka W-D, Weinl M, Haluska M, Schreck M, Osterwalder J, Greber T

机构信息

Physik-Institut, Universität Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland.

出版信息

J Phys Condens Matter. 2017 Nov 29;29(47):475001. doi: 10.1088/1361-648X/aa8f27.

Abstract

Large scale tetraoctylammonium-assisted electrochemical transfer of graphene grown on single-crystalline Ir(1 1 1) films by chemical vapour deposition is reported. The transferred samples are characterized in air with optical microscopy, Raman spectroscopy and four point transport measurements, providing the sheet resistance and the Hall carrier concentration. In vacuum we apply low energy electron diffraction and photoelectron spectroscopy that indicate transferred large-scale single orientation graphene. Angular resolved photoemission reveals a Fermi surface and a Dirac point energy which are consistent with charge neutral graphene.

摘要

报道了通过化学气相沉积在单晶Ir(1 1 1)薄膜上生长的石墨烯的大规模四辛基铵辅助电化学转移。转移后的样品在空气中通过光学显微镜、拉曼光谱和四点传输测量进行表征,得到了薄层电阻和霍尔载流子浓度。在真空中,我们应用低能电子衍射和光电子能谱,表明转移后的石墨烯具有大规模单取向。角分辨光电子能谱揭示了费米面和狄拉克点能量,这与电荷中性石墨烯一致。

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