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适用于半导体量子点单光子的简单原子量子存储器。

Simple Atomic Quantum Memory Suitable for Semiconductor Quantum Dot Single Photons.

作者信息

Wolters Janik, Buser Gianni, Horsley Andrew, Béguin Lucas, Jöckel Andreas, Jahn Jan-Philipp, Warburton Richard J, Treutlein Philipp

机构信息

Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland.

出版信息

Phys Rev Lett. 2017 Aug 11;119(6):060502. doi: 10.1103/PhysRevLett.119.060502. Epub 2017 Aug 8.

Abstract

Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of δf=0.66  GHz, the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For a 50 ns storage time, we measure η_{e2e}^{50  ns}=3.4(3)% end-to-end efficiency of the fiber-coupled memory, with a total intrinsic efficiency η_{int}=17(3)%. Straightforward technological improvements can boost the end-to-end-efficiency to η_{e2e}≈35%; beyond that, increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional read-out noise level of 9×10^{-3} photons is dominated by atomic fluorescence, and for input pulses containing on average μ_{1}=0.27(4) photons, the signal to noise level would be unity.

摘要

与单光子源匹配的量子存储器将构成未来量子网络技术的重要基石。我们基于电磁感应透明效应,在热铷蒸汽中展示了一种具有按需存储和检索功能的此类存储器。该存储器的接收带宽为δf = 0.66 GHz,适用于半导体量子点发射的单光子。在这种情况下,蒸汽室存储器在存储效率、存储时间、噪声水平和实验复杂性之间实现了极佳的平衡,并且原子碰撞对光学相干性的影响可忽略不计。我们使用单光子水平的衰减激光脉冲演示了该存储器的操作。对于50 ns的存储时间,我们测量到光纤耦合存储器的端到端效率η_{e2e}^{50 ns} = 3.4(3)%,总本征效率η_{int} = 17(3)%。直接的技术改进可以将端到端效率提高到η_{e2e}≈35%;除此之外,增加光学深度并利用原子的塞曼子结构将使这种存储器的效率接近单位效率。在当前的存储器中,9×l0^{-3} 个光子的无条件读出噪声水平主要由原子荧光决定,对于平均包含μ_{1}=0.27(4) 个光子的输入脉冲,信噪比将为1。

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