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起搏器对50Hz电场的抗扰度计算:单极检测模式下的感应电压比双极检测模式下大10倍。

Computation of Pacemakers Immunity to 50 Hz Electric Field: Induced Voltages 10 Times Greater in Unipolar Than in Bipolar Detection Mode.

作者信息

Gercek Cihan, Kourtiche Djilali, Nadi Mustapha, Magne Isabelle, Schmitt Pierre, Souques Martine

机构信息

Institut Jean Lamour, Université de Lorraine-CNRS (UMR 7198), BP 70239, 54506 Vandœuvre, France.

EDF R&D, Avenue des Renardières-Ecuelles, 77818 Moret-sur-Loing, France.

出版信息

Bioengineering (Basel). 2017 Mar 6;4(1):19. doi: 10.3390/bioengineering4010019.

DOI:10.3390/bioengineering4010019
PMID:28952498
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5590432/
Abstract

Thisstudy aims to compute 50 Hz electric field interferences on pacemakers for diverse lead configurations and implantation positions. Induced phenomena in a surface-based virtual human model (standing male grounded with arms closed, 2 mm resolution) are computed for vertical exposure using CST EM 3D software, with and without an implanted pacemaker. Induced interference voltages occurring on the pacemaker during exposure are computed and the results are discussed. The bipolar mode covers 99% of the implanted pacing leads in the USA and Europe, according to statistics. The tip-to-ring distance of a lead may influence up to 46% of the induced voltage. In bipolar sensing mode, right ventricle implantation has a 41% higher induced voltage than right atrium implantation. The induced voltage is in average 10 times greater in unipolar mode than in bipolar mode, when implanted in the right atrium or right ventricle. The electric field threshold of interference for a bipolar sensing mode in the worst case setting is 7.24 kV·m, and 10 times higher for nominal settings. These calculations will be completed by an in vitro study.

摘要

本研究旨在计算不同导联配置和植入位置下,起搏器上50赫兹电场干扰情况。使用CST EM 3D软件,针对垂直暴露情况,在有和没有植入起搏器的情况下,计算基于表面的虚拟人体模型(双臂闭合接地的站立男性,分辨率为2毫米)中的感应现象。计算暴露期间起搏器上出现的感应干扰电压,并对结果进行讨论。据统计,在美国和欧洲,双极模式覆盖了99%的植入式起搏导线。导线的尖端到环的距离可能会影响高达46%的感应电压。在双极感知模式下,右心室植入的感应电压比右心房植入高41%。当植入右心房或右心室时,单极模式下的感应电压平均比双极模式大10倍。在最坏情况设置下,双极感知模式的电场干扰阈值为7.24 kV·m,标称设置下则高10倍。这些计算将通过体外研究完成。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/814c/5590432/e5471f9f82ae/bioengineering-04-00019-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/814c/5590432/cae92466498d/bioengineering-04-00019-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/814c/5590432/5ac208bef32d/bioengineering-04-00019-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/814c/5590432/a7affbf52796/bioengineering-04-00019-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/814c/5590432/26cadff14d2f/bioengineering-04-00019-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/814c/5590432/3d3ea5e27582/bioengineering-04-00019-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/814c/5590432/e5471f9f82ae/bioengineering-04-00019-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/814c/5590432/cae92466498d/bioengineering-04-00019-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/814c/5590432/5ac208bef32d/bioengineering-04-00019-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/814c/5590432/a7affbf52796/bioengineering-04-00019-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/814c/5590432/26cadff14d2f/bioengineering-04-00019-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/814c/5590432/3d3ea5e27582/bioengineering-04-00019-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/814c/5590432/e5471f9f82ae/bioengineering-04-00019-g006.jpg

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