Lou Zhenhua, Zeng Longhui, Wang Yuange, Wu Di, Xu Tingting, Shi Zhifeng, Tian Yongtao, Li Xinjian, Tsang Yuen Hong
Opt Lett. 2017 Sep 1;42(17):3335-3338. doi: 10.1364/OL.42.003335.
Polycrystalline 2D layered molybdenum disulfide (MoS) films were synthesized via a thermal decomposition method. The MoS/Si heterostructures were constructed in situ by synthesis MoS on plane Si substrates. Such MoS/Si heterostructures exhibited high sensitivity to light illumination with wavelengths ranging from the deep ultraviolet to the near infrared. Photoresponse analysis reveals that a high responsivity of 23.1 A/W, a specific detectivity of 1.63×10 Jones, and a fast response speed of 21.6/65.5 μs were achieved. Notably, the MoS/Si heterojunction photodetector could operate with excellent stability and repeatability over a wide frequency range up to 150 kHz. The high performance could be attributed to the high-quality heterojunction between MoS and Si obtained by the in situ fabrication process. Such high performance with broadband response suggests that MoS/Si heterostructures could have great potential in optoelectronic applications.
通过热分解法合成了多晶二维层状二硫化钼（MoS）薄膜。通过在平面硅衬底上原位合成MoS构建了MoS/Si异质结构。这种MoS/Si异质结构对从深紫外到近红外波长的光照表现出高灵敏度。光响应分析表明，实现了23.1 A/W的高响应度、1.63×10琼斯的比探测率以及21.6/65.5 μs的快速响应速度。值得注意的是，MoS/Si异质结光电探测器在高达150 kHz的宽频率范围内能够以优异的稳定性和重复性运行。高性能可归因于通过原位制备工艺获得的MoS和Si之间的高质量异质结。这种具有宽带响应的高性能表明MoS/Si异质结构在光电子应用中具有巨大潜力。
