High-performance MoS/Si heterojunction broadband photodetectors from deep ultraviolet to near infrared.

Polycrystalline 2D layered molybdenum disulfide (MoS) films were synthesized via a thermal decomposition method. The MoS/Si heterostructures were constructed in situ by synthesis MoS on plane Si substrates. Such MoS/Si heterostructures exhibited high sensitivity to light illumination with wavelengths ranging from the deep ultraviolet to the near infrared. Photoresponse analysis reveals that a high responsivity of 23.1 A/W, a specific detectivity of 1.63×10 Jones, and a fast response speed of 21.6/65.5 μs were achieved. Notably, the MoS/Si heterojunction photodetector could operate with excellent stability and repeatability over a wide frequency range up to 150 kHz. The high performance could be attributed to the high-quality heterojunction between MoS and Si obtained by the in situ fabrication process. Such high performance with broadband response suggests that MoS/Si heterostructures could have great potential in optoelectronic applications.