School of Materials Science and Engineering, Hefei University of Technology, HefeiAnhui, 230009, P. R. China.
School of Electronic Science and Applied Physics, Hefei University of Technology, HefeiAnhui, 230009, P. R. China.
Small. 2016 Feb 24;12(8):1062-71. doi: 10.1002/smll.201502923. Epub 2016 Jan 7.
c2D transition metal dichalcogenides (TMDCs)-based heterostructures have been demonstrated to achieve superior light absorption and photovoltaic effects theoretically and experimentally, making them extremely attractive for realizing optoelectronic devices. In this work, a vertical multilayered n-MoS2/n-silicon homotype heterojunction is fabricated, which takes advantage of multilayered MoS2 grown in situ directly on plane silicon. Electrical characterization reveals that the resultant device exhibits high sensitivity to visible-near-infrared light with responsivity up to 11.9 A W(-1). Notably, the photodetector shows high-speed response time of ≈ 30.5 µs/71.6 µs and capability to work under higher pulsed light irradiation approaching 100 kHz. The high response speed could be attributed to a good quality of the multilayer MoS2 , as well as in situ device fabrication process. These findings suggest that the multilayered MoS2 /Si homotype heterojunction have great potential application in the field of visible-near-infrared detection and might be used as elements for construction of high-speed integrated optoelectronic sensor circuitry.
基于二维过渡金属二卤族化合物（TMDCs）的异质结在理论和实验上都表现出优异的光吸收和光伏效应，因此非常适合实现光电设备。在这项工作中，我们制造了一种垂直多层 n-MoS2/n-硅同质异质结，它利用在平面硅上原位生长的多层 MoS2 来实现。电学特性分析表明，所得到的器件对可见光-近红外光具有高灵敏度，响应度高达 11.9 A W(-1)。值得注意的是，该光电探测器具有 ≈ 30.5 µs/71.6 µs 的高速响应时间和在接近 100 kHz 的高脉冲光辐照下工作的能力。高响应速度归因于多层 MoS2 的高质量以及原位器件制造工艺。这些发现表明，多层 MoS2 /Si 同质异质结在可见光-近红外探测领域具有巨大的应用潜力，可作为构建高速集成光电子传感器电路的元件。
